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Effects of space radiation on resistive memory and comparison with other types of non-volatile memory

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dc.contributor.authorShvetsov-Shilovskiy, I.
dc.contributor.authorBoruzdina, A.
dc.contributor.authorChepov, V.
dc.contributor.authorPetrov, A.
dc.contributor.authorUlanova, A.
dc.contributor.authorПетров, Андрей Григорьевич
dc.contributor.authorУланова, Анастасия Владиславовна
dc.date.accessioned2024-12-25T15:55:57Z
dc.date.available2024-12-25T15:55:57Z
dc.date.issued2022
dc.description.abstract© 2022 IEEE.In this work we consider the prospect of using resistive memory microcircuits (RRAM, CBRAM) for space applications. Total dose and single event effects in resistive memory test cells and finished CMOS RRAM microcircuits were investigated. We also provide a comparative assessment of typical hardness levels for other types of non-volatile memories such as flash, ferroelectric (FRAM), magnetoresistive (MRAM) memory. We have summarized the data on SEE and TID hardness levels for different types of commercially available non-volatile memories.
dc.identifier.citationEffects of space radiation on resistive memory and comparison with other types of non-volatile memory / Shvetsov-Shilovskiy, I. [et al.] // Moscow Workshop on Electronic and Networking Technologies, MWENT 2022 - Proceedings. - 2022. - 10.1109/MWENT55238.2022.9802312
dc.identifier.doi10.1109/MWENT55238.2022.9802312
dc.identifier.urihttps://www.doi.org/10.1109/MWENT55238.2022.9802312
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85134052333&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/28125
dc.relation.ispartofMoscow Workshop on Electronic and Networking Technologies, MWENT 2022 - Proceedings
dc.titleEffects of space radiation on resistive memory and comparison with other types of non-volatile memory
dc.typeConference Paper
dspace.entity.typePublication
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