Персона: Зебрев, Геннадий Иванович
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Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе.
Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.
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Зебрев
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Геннадий Иванович
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- ПубликацияТолько метаданныеThe 'Extrinsic' Compact Model of the MOSFET Drain Current Based on a New Interpolation Expression for the Transition between Linear and Saturation Regimes with a Monotonic Decrease of the Differential Conductance to a Nonzero Value(2020) Turin, V. O.; Shkarlat, R. S.; Iniguez, B.; Shur, M. S.; Zebrev, G. I.; Зебрев, Геннадий Иванович© 2020 IEEE.Previously, we proposed a new interpolation expression to bridge the transition between the linear and the saturation regimes of 'intrinsic' MOSFET. This approach, in contrast to the traditional one, gives a monotonic decrease of the differential conductance from the maximum value in the linear regime to the minimum value in the saturation regime. Later, we proposed a linear approximation for an 'extrinsic' MOSFET drain current dependence on the 'extrinsic' drain bias in the saturation regime for not very high drain bias when nonlinear effects can be neglected. To obtain this approximation, an equation for the output differential resistance of the 'extrinsic' MOSFET in saturation regime was obtained, that is similar to the result known from the theory of the common source MOSFET amplifier with source degeneration. In this paper, we combine these two results and present an 'extrinsic' compact model for a short-channel MOSFET above threshold drain current with proper account of the differential conductance in the saturation regime.
- ПубликацияТолько метаданныеModelling of saturation current of an organic field-effect transistor with accounting for contact resistances(2019) Turin, V. O.; Rakhmatov, B. A.; Kim, C. H.; Iniguez, B.; Zebrev, G. I.; Зебрев, Геннадий Иванович© 2019 Published under licence by IOP Publishing Ltd. The saturation current of an organic field-effect transistor was calculated numerically by bisection method taking into account the source and drain resistances. Dependences of the saturation current as a function of the gate voltage, centred on the threshold voltage, and as a function of the "extrinsic" (taking into account the source and drain resistances) saturation voltage are presented. The calculations were carried out using an iterative scheme assuming the saturation current to be zero for iteration zero and using different numbers of iterations. In addition, we carried out a compact modelling of the saturation current in the framework of the approach we proposed earlier. It is shown that when in the equation for the compact modelling initial value of saturation current of zero value (corresponding to zero iteration) is used, a good agreement with the bisection method of over a wide range of gate voltages is obtained.
- ПубликацияТолько метаданныеA piecewise approximation for short-channel “extrinsic” MOSFET drain current dependence on drain-to-source bias including linear triode, linear saturation and asymptotic saturation regimes(2019) Turin, V. O.; Shkarlat, R. S.; Rakhmatov, B. A.; Kim, C. -H.; Zebrev, G. I.; Зебрев, Геннадий Иванович© The Electrochemical Society.Previously, we transformed the linear drain bias asymptote equation for the MOSFET drain current in the saturation regime from the “intrinsic” case into “extrinsic” case with accounting for the velocity saturation effect. We obtained the equation for the drain current that yielded the nonlinear dependence on the “extrinsic” drain bias in saturation regime in an implicit form. We derived the equation for the differential conductance of the MOSFET at the “saturation point” and proposed a linear approximation for the dependence of the drain current on the “extrinsic” drain bias in the saturation regime for not very high drain bias when nonlinear effects can be neglected. In this paper, we investigate the asymptotic behavior of the implicit equation for the drain current in case when “extrinsic” drain bias tends to infinity. We propose the nonlinear approximation for the drain current asymptotic that describes a slow current rise to its limiting value when the “extrinsic” drain bias tends to infinity. This approximation is based on analytical solution of quartic equation that can be solved easily enough using Ferrari's method.
- ПубликацияТолько метаданныеAn Accurate Analytical Modeling of Contact Resistances in MOSFETs(2021) Turin, V. O.; Bokitko, G. D.; Malich, D. S.; Zebrev, G. I.; Зебрев, Геннадий Иванович© 2021 IEEE.We have presented an analytical physics-based model, which can continually describe the MOSFET I- V curves in all operation modes taking into account the finite source-drain resistances.
- ПубликацияТолько метаданныеAccounting for Carrier Mobility Reduction due to the Normal Field in the Saturation Current Modeling of Extrinsic MOSFETs(2023) Turin, V. O.; Ilyushina, Y. V.; Shcherbina, M. A.; Rakhmatov, B. A.; Zebrev, G. I.; Зебрев, Геннадий Иванович