2019, Maslovsky, V. M., Mrozovskaya, E. V., Zimin, P. A., Chubunov, P. A., Zebrev, G. I., Мрозовская, Елизавета Владимировна, Чубунов, Павел Александрович, Зебрев, Геннадий Иванович

© 2019 by Begell House, Inc.The manifestation of simultaneous annealing in p-MNOS (metal–nitride–oxide‑semiconductor) samples with thick oxide and a pronounced effect of enhanced low-dose-rate sensitivity (ELDRS) are investigated. The simulation was based on experimental data.

2019, Mrozovskaya, E., Zimin, P., Chubunov, P., Zebrev, G., Мрозовская, Елизавета Владимировна, Чубунов, Павел Александрович, Зебрев, Геннадий Иванович

© 2019 SPIE. We simulated in this work the electrical characteristics of p-MNOS based dosimeters before and after irradiation. The parameters of dose sensitivity for the samples irradiated in the different electric modes of operation were obtained. A good agreement between simulation and the measurement results was shown.

2022, Iakovlev, S., Mrozovskaya, E., Chubunov, P., Zebrev, G. I., Мрозовская, Елизавета Владимировна, Чубунов, Павел Александрович, Зебрев, Геннадий Иванович

IEEEThe Single Event Latchup cross sections as functions of LET in different CMOS circuits were experimentally investigated at different temperatures. A simplified simulation method for the SEL cross section temperature dependence is proposed and validated.

2019, Anashin, V. S., Zimin, P. A., Mrozovskaya, E. V., Chubunov, P. A., Zebrev, G. I., Мрозовская, Елизавета Владимировна, Чубунов, Павел Александрович, Зебрев, Геннадий Иванович

© 2019 Elsevier B.V.This paper describes the radiation response and I-V characteristics of the stacked p-MNOS based RADFETs measured at different dose rates and irradiation temperatures. It is shown that the enhanced charge trapping takes place at the interface of the thick gate dielectrics in the MNOS transistors at low dose rates (ELDRS). The sensitivity of the radiation effect to irradiation temperature has also experimentally revealed. We associate both effects with the temperature and dose rate dependence of the effective charge yield in the thick oxides described within the framework of the previously proposed model. We have also simulated the I-V characteristics of the transistors for different total doses and irradiation conditions. It has been found the used electric and radiation models qualitatively and semi-quantitatively describe the observed dependencies of the RADFETs’ sensitivity on dose rates and irradiation temperatures for the devices with different thickness of insulators.

2022, Mrozovskaya, E., Chubunov, P., Zebrev, G., Мрозовская, Елизавета Владимировна, Чубунов, Павел Александрович, Зебрев, Геннадий Иванович

© 2022 SPIE.The dosimeters based on RADFETs are high actual for utilizing in space where the low dose rates irradiation prevails. The paper presents new experimental data on low-intensity irradiation of p-MNOS based RADFET. The obtained results were compared with the results of irradiation at high dose rates. The effect of ELDRS and the simultaneous annealing effect on different types of samples were discussed. The sensitivity of both types changed similarly at the range 1 - 100 rad(Si)/s. However, for dose rates less than 1 rad(Si)/s, the effect of the simultaneous annealing on change in the threshold voltage shift in time was clearly noticed only for samples with 500 nm oxide and absented for samples with 150 nm oxide.