Персона: Рыжук, Роман Валериевич
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SYNTHESIS OF RADIO IMAGES BY MICROWAVE PHOTONICS METHODS
The radio vision is the most promising method for the maximum possible information about objects to obtain. Below are the basic methods for image synthesis by means of the radio vision: 1. Method of holography. The reference microwave signal is added to the microwave echo signal and then the intensity of an interference pattern is measured and digitized. After digital processing, the image of the object is reconstructed. 2. A method for determining the amplitude-phase distribution in the receiving antenna opening and obtaining an image of the object after digital data processing. 3. The inverse synthetic aperture radar (ISAR) method. This method uses versatile signal processing technique rather than large aperture antennas to identify and reconstruct a moving target. 4. The MIMO (multiple inputs, multiple outputs) method based on distributed radar network.
Thermal stability of tantalum nitride based thin film resistors
© 2019 Published under licence by IOP Publishing Ltd. Tantalum nitride thin films were deposited on Al2O3 substrates by the dc-magnetron sputtering technique. The nitrogen content in the argon/nitrogen flow varied from 5 to 50%. Structural properties were studied using X-ray diffraction. The ratio of Ar:N2 was 4:1; the ratio of Ta:N became 1:1. Sheet resistance depends on thickness and is in the range of 20 - 80 Ω/□ due to thickness 100 - 50 nm. The TaN films deposited at a nitrogen/argon ratio of 20% show the thermal stability of the resistance in the 25-400°C temperature range. Sheet resistance degradation was ∼ 5%. The TCR value was determined in the range of 25 - 300 C and was equal to - 21 ppm/K.
Optically Detectable Magnetic Resonance of NV-Center Ensembles in CVD Diamond with Different 13C Contents
III-nitride HEMT Heterostructures with Ultrathin AlN Barrier: Obtaining and Experimental Application
Силовой транзистор на основе AlN/GaN гетероструктуры с 2D электронным газом
Изобретение относится к приборам твердотельной электроники, и в частности к конструкции силового транзистора на основе соединений нитридов III группы. Силовой транзистор на основе AlN/GaN гетероструктуры с 2D электронным газом состоит из подложки, буферного слоя GaN, нанесенного на подложку, ультратонкого барьерного слоя AlN ультратонкий не более 7, нанесенного на буферный слой, защитного верхнего слоя GaN, нанесенного на барьерный слой, электродов истока, затвора и стока, нанесенных на защитный слой и пространственно отделенных друг от друга, пассивирующего слоя Si3N4, нанесенного на защитный слой между электродами, а также металлизации полевой пластины, нанесенной на пассивирующий слой и электрически соединенной с затвором, при этом расстояние между затвором и стоком, а также длина полевой пластины - взаимосвязанные величины, подобранные исходя из требуемого значения напряжения пробоя. Изобретение обеспечивает получение силового транзистора на основе III-нитридной гетероструктуры, характеризующейся величиной слоевого сопротивления менее 250 Ом/□, с топологией, обеспечивающей напряжение пробоя более 100 В. 4 ил.
Parametrization of a Microwave and the Noise Model of a Metamorphic 0.15 µm MHET InAlAs/InGaAs Transistor
© 2021, Pleiades Publishing, Ltd.Abstract: AlGaAs MHEMT transistors are studied in the microwave frequency range with a gate length of 0.15 μm. It is found that the discrepancy between the experimental and theoretically calculated, within the model, S-parameters does not exceed 0.5% in the frequency range from 1 to 30 GHz. The static characteristics of the device are satisfactorily described by the indicated model in the voltage range of the runoff up to 2.5 V. For the analysis of the noise characteristics, the Fukui model is used. It is found that the influence of the parasitic drain capacitance and the values of the drain and source inductances do not significantly affect the noise characteristics of the transistor, and an increase in the parasitic capacitance and a decrease in the parasitic gate inductance can lead to a significant reduction in the high-frequency noise figure.
Application of Microwave Photonic Methods in the Design of Microwave Receiving Devices for the Formation and Registration of Radio Holograms
Nitro Derivatives of Silaprismanes as High-Energy Compounds: Theoretical Study
We present ab initio study of structures and properties of silaprismanes Si2nH2n and their nitro derivatives Si2nH2n-1NO2 (n = 3-10). We found that silaprismane Si10H9NO2 possesses the highest stability among all studied cages. Attached NO2 group results in weak decreasing of the HOMO-LUMO gap. The smaller prismanes bind with NO2 groups more strongly. The comparison between silaprismanes and carbon prismanes is also discussed.