Publication:
The effect of aluminium concentration on the resistance of Si3N4 to ion track formation

Дата
2024
Авторы
Ibrayeva, A.
O'Connell, J.
Skuratov, V.
Janse van Vuuren, A.
Journal Title
Journal ISSN
Volume Title
Издатель
Научные группы
Организационные подразделения
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Организационная единица
Институт ядерной физики и технологий
Цель ИЯФиТ и стратегия развития - создание и развитие научно-образовательного центра мирового уровня в области ядерной физики и технологий, радиационного материаловедения, физики элементарных частиц, астрофизики и космофизики.
Выпуск журнала
Аннотация
The role of Al impurities on the structural response of polycrystalline silicon nitride to swift Xe and Bi ions at single ion track and overlapped ion track fluences is investigated. Si3N4 with Al impurity concentrations of 3 at.%, 1 at.% and 0.1. at.% were examined by means of high resolution scanning transmission electron microscopy. The threshold electronic energy loss (Set) required to form amorphous tracks was found to decrease with increasing Al fraction from above 33 keV/nm (0.1 at.% Al) to below 22 keV/nm for specimens containing about 3 at.% Al. All specimens were partially amorphized at overlapping ion fluence and the amorphous fraction monotonically increased with increasing Al content at the same ion fluence.
Описание
Ключевые слова
Ion track , Surface Analysis , Polycrystalline silicon
Цитирование
The effect of aluminium concentration on the resistance of Si3N4 to ion track formation / Ibrayeva, A. [et al.] // Vacuum. - 2024. - 220. - 10.1016/j.vacuum.2023.112865
URI
https://www.doi.org/10.1016/j.vacuum.2023.112865
 https://www.scopus.com/record/display.uri?eid=2-s2.0-85179128458&origin=resultslist
 https://openrepository.mephi.ru/handle/123456789/25740
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