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The effect of aluminium concentration on the resistance of Si3N4 to ion track formation

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dc.contributor.authorIbrayeva, A.
dc.contributor.authorO'Connell, J.
dc.contributor.authorSkuratov, V.
dc.contributor.authorJanse van Vuuren, A.
dc.contributor.authorСкуратов, Владимир Алексеевич
dc.date.accessioned2024-12-04T08:19:59Z
dc.date.available2024-12-04T08:19:59Z
dc.date.issued2024
dc.description.abstractThe role of Al impurities on the structural response of polycrystalline silicon nitride to swift Xe and Bi ions at single ion track and overlapped ion track fluences is investigated. Si3N4 with Al impurity concentrations of 3 at.%, 1 at.% and 0.1. at.% were examined by means of high resolution scanning transmission electron microscopy. The threshold electronic energy loss (Set) required to form amorphous tracks was found to decrease with increasing Al fraction from above 33 keV/nm (0.1 at.% Al) to below 22 keV/nm for specimens containing about 3 at.% Al. All specimens were partially amorphized at overlapping ion fluence and the amorphous fraction monotonically increased with increasing Al content at the same ion fluence.
dc.identifier.citationThe effect of aluminium concentration on the resistance of Si3N4 to ion track formation / Ibrayeva, A. [et al.] // Vacuum. - 2024. - 220. - 10.1016/j.vacuum.2023.112865
dc.identifier.doi10.1016/j.vacuum.2023.112865
dc.identifier.urihttps://www.doi.org/10.1016/j.vacuum.2023.112865
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85179128458&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/25740
dc.relation.ispartofVacuum
dc.subjectIon track
dc.subjectSurface Analysis
dc.subjectPolycrystalline silicon
dc.titleThe effect of aluminium concentration on the resistance of Si3N4 to ion track formation
dc.typeArticle
dspace.entity.typePublication
oaire.citation.volume220
relation.isAuthorOfPublicationa42d0cba-a1ca-4481-b526-7b326b53db08
relation.isAuthorOfPublication.latestForDiscoverya42d0cba-a1ca-4481-b526-7b326b53db08
relation.isOrgUnitOfPublicationba0b4738-e6bd-4285-bda5-16ab2240dbd1
relation.isOrgUnitOfPublication.latestForDiscoveryba0b4738-e6bd-4285-bda5-16ab2240dbd1
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