Персона:
Скуратов, Владимир Алексеевич

Организационные подразделения

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Цель ИЯФиТ и стратегия развития - создание и развитие научно-образовательного центра мирового уровня в области ядерной физики и технологий, радиационного материаловедения, физики элементарных частиц, астрофизики и космофизики.

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Скуратов

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Владимир Алексеевич

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Теперь показываю 1 - 10 из 108

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Modification of Keggin anion structure with ion beams—A new spectroscopic insights into the effects of keV- and MeV-ion beam irradiation on 12-tungstophosphoric acid
(2022) Mravik, Ž.; Bajuk-Bogdanović, D.; Jovanović, S.; Rmuš, J.; Olejniczak, A.; Mraković, A.; Lazarević, J.; Uskoković-Marković, S.; Lazarević, N.; Skuratov, V.; Скуратов, Владимир Алексеевич
Ion beam irradiation is a versatile tool for structural modification and engineering of new materials. In this study, 12-tungstophosphoric acid (WPA) films of different thickness were spin-coated on platinized silicon substrate and irradiated with low energy hydrogen ions (10 keV) and swift heavy ions (Bi, Xe, and V) with energies up to 710 MeV. The different energy/fluence combinations allowed controllable structural changes that were investigated in detail using Raman and Infrared spectroscopy. For 120-nm-thick WPA samples, the irradiation led to the decrease of intensity of the skeletal and W-Oc-W bands of Keggin anion in order: Bi andlt; V andlt; Xe (for their applied energy/fluence combination). Also, symmetry change of Keggin anion similar to the one observed in the case of Keggin anions interacting with the supports was observed. For the selected ion beam irradiation parameters, xenon ion beam induced transformation of WPA to polytungstate. For 20-μm-thick WPA samples, the irradiation with hydrogen ion beam induced changes of skeletal vibrations and increased individualistic behavior of Keggin anions. As the fluence increased, the amount of the Keggin anions partially transformed to bronze also increased. Irradiation with vanadium also caused transformation to bronze-like structure but with higher ratio of terminal W=Od bonds. The overall results show clear correlation between degree of structural modification of WPA and the calculated displacement per atom value. These results open possibilities for engineering new catalytically active structures of polyoxometalates with the help of ion beams. © 2022 John Wiley and Sons Ltd.
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IR Photoluminescence of Silicon Irradiated with High-Energy Xe Ions after Annealing
(2022) Cherkova, S. G.; Volodin, V. A.; Skuratov, V. A.; Stoffel, M.; Rinnert, H.; Vergnat, M.; Скуратов, Владимир Алексеевич
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Effect of SHI irradiation and high temperature annealing on the microstructure of SiC implanted with Ag
(2022) Abdelbagi, H. A. A.; Adeojo, S. A.; Mohlala, T. M.; Hlatshwayo, T. T.; Skuratov, V. A.; Скуратов, Владимир Алексеевич
© 2021Scanning electron microscopy (SEM), Raman spectroscopy and Rutherford backscattering spectrometry (RBS) were used to study the influence of swift heavy ion (SHI) irradiation and annealing on the microstructure of polycrystalline SiC implanted with silver (Ag). Polycrystalline SiC specimens were first implanted with 360 keV Ag + ions at room temperature (RT) to a fluence of 2 × 1016cm−2. Thereafter, some of the implanted samples were irradiated with Xe ions of 167 MeV (SHI) at room temperature to a fluence of 3.4 × 1014 cm−2 and 8.4 × 1014 cm−2. Both the as-implanted and implanted then irradiated samples were annealed in vacuum at temperatures ranging from 1100 to 1400 °C in steps of 100 °C for 5 h. Raman and SEM results showed that implantation of silver (Ag) resulted in complete amorphization of the near surface region of the SiC substrates. However, SHI irradiation of the as-implanted SiC resulted in partial recrystallization of the initially amorphized layer. The as-implanted samples exhibited more crystallinity after annealing at 1100 °C as compared to SHI irradiated samples annealed at same conditions. This poor recrystallization of the SHI irradiated SiC samples was due to the amount of impurities (i.e. concentration of Ag atoms) retained after annealing at 1100 °C. Raman and SEM results showed that annealing of the as-implanted samples at 1100 °C resulted in larger average crystal size compared to the SHI irradiated samples annealed in the same conditions. The intensity of the longitudinal optical (LO) phonon in Raman spectra increases with the increasing the average crystal sizes of SiC.
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Time-resolved high energy ionoluminescence of Al2O3
(2021) Seitbayev, A.; Dauletbekova, A.; Teterev, Y. G.; Krylov, A. N.; Skuratov, V. A.; Скуратов, Владимир Алексеевич
© 2021 Elsevier B.V.We have compared the luminescence decay from intact and pre-damaged Al2O3 crystals registered during single swift heavy ion and photo- picosecond laser pulse excitation (λex. = 440 nm). The decay curves measured during 1.2 ÷ 1.6 MeV/amu C, Ar, V, Kr, Xe ion irradiation at room temperature are composed of three components – fast (τ1 < 1 ns), τ2 = 1.8 ns (F+-centers) and τ3 = 54–80 ns (E-luminescence, the nature of emission is under discussion). The measurements performed on pre-irradiated samples have demonstrated that accumulated radiation damage suppresses the E-luminescence and only τ1 and τ2 components are observed. It was found that photoexcitation at 440 nm induces strong emission of F22+- centers with a lifetime of about 8 ns which is not detected during high energy ion irradiation. This is ascribed to the quenching effect of high density excitations in a particle track.
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EBS/C impurity and damage profiling of 4 MeV C implanted MgF2 single crystal
(2025) Gloginjic, M.; Erich, M.; Kokkoris, M.; Chen, S.; Skuratov, V.; Скуратов, Владимир Алексеевич
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Positron beam studies of radiation damage induced by various energy heavy ions of Xe26+ in iron
(2019) Horodek, P.; Kobets, A. G.; Siemek, K.; Skuratov, V. A.; Скуратов, Владимир Алексеевич
© 2019 Polish Academy of Sciences. All rights reserved.Experimental studies of pure iron exposed to Xe26+ irradiation are reported. Implantations were made with the fluence of 5 × 1013 ions/cm2 using 167 MeV ions moderated to 122.5, 77.0, and 44.5 MeV. Investigations were performed with variable energy positron beam (VEP). Doppler broadening spectroscopy (DB) was applied. The analysis of obtained results gives information about the presence of various kind of open-volume defects. Two layers with different values of positron diffusion lengths were found in implanted samples. The deeper one was more defected.
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Effect of the electronic kinetics on graphitization of diamond irradiated with swift heavy ions and fs-laser pulses
(2019) Khmelnitski, R. A.; Kononenko, V. V.; O'Connell, J. H.; Syrykh, G. F.; Skuratov, V. A.; Скуратов, Владимир Алексеевич
© 2018 Elsevier B.V. Diamond preliminary damaged with neutrons was irradiated with swift heavy ions (SHI, 1030 MeV 209Bi) decelerated in the electronic stopping regime as well as with fs-laser pulses. The initial excess electronic energy densities appearing in the nanometric vicinity of the SHI trajectories and within the absorbing layers in laser spots were comparable (∼1024 eV cm−3). Graphitization of diamond in the central parts of the lased spots was observed above the threshold fluence of 15–30 J/cm−2. It was also found that the lower threshold fluence is required for initiating graphitization as well as destruction of the pre-damaged crystal by laser pulses in comparison to that for undamaged diamond. This indicates a noticeable effect of an existing defect ensemble on the kinetics of diamond transformations in laser spots. However, X-ray diffraction, atomic-force microscopy, and electron microscopy detected no graphitic domains within the SHI-irradiated pre-damaged crystal. The research demonstrated that the density of the initial excess electronic energy cannot be treated as the sole parameter governing subsequent structure transformations in diamond. Large differences between the spatial as well as temporal scales finally results in different pathways of the relaxation kinetics of this excess energy in laser spots and SHI tracks in diamond.
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Recrystallization as the governing mechanism of ion track formation
(2019) Rymzhanov, R. A.; Medvedev, N.; O'Connell, J. H.; vanVuuren, AJanse; Skuratov, V. A.; Скуратов, Владимир Алексеевич
Response of dielectric crystals: MgO, Al2O3 and Y3Al5O12 ( YAG) to irradiation with 167 MeV Xe ions decelerating in the electronic stopping regime is studied. Comprehensive simulations demonstrated that despite similar ion energy losses and the initial excitation kinetics of the electronic systems and lattices, significant differences occur among final structures of ion tracks in these materials, supported by experiments. No ion tracks appeared in MgO, whereas discontinuous distorted crystalline tracks of similar to 2 nm in diameter were observed in Al2O3 and continuous amorphous tracks were detected in YAG. These track structures in Al2O3 and YAG were confirmed by high resolution TEM data. The simulations enabled us to identify recrystallization as the dominant mechanism governing formation of detected tracks in these oxides. We analyzed effects of the viscosity in molten state, lattice structure and difference in the kinetics of metallic and oxygen sublattices at the crystallization surface on damage recovery in tracks.
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Exploring metastable phase formation: Swift heavy ion effects on partially stabilized zirconia
(2024) Kirilkin, N. S.; Vershinina, T. N.; O'Connell, J. H.; Rymzhanov, R. A.; Skuratov, V. A.; Скуратов, Владимир Алексеевич
Открытый доступ
АМОРФИЗАЦИЯ И МЕХАНИЧЕСКИЕ НАПРЯЖЕНИЯ В Si3N4 ПРИ ОБЛУЧЕНИИ БЫСТРЫМИ ТЯЖЕЛЫМИ ИОНАМИ
(НИЯУ МИФИ, 2021) Мутали, А. К.; Скуратов, В. А.; Ибраева, А. Д.; Жумажанова, А. Т.; Даулетбекова, А.; Акылбеков, А.; Здоровец, М. В.; Скуратов, Владимир Алексеевич
The Raman spectroscopy method was used to study the radiation damage and associated internal mechanical stresses in polycrystalline silicon nitride (Si3N4) irradiated with swift heavy 167 MeV Xe and 710 MeV Bi ions. The cross-section and near surface spectra of the irradiated region were registered at room temperature. FWHM parameters - 204 cm−1 and peak position - 862 cm−1 were used to characterize the amorphization and the mechanical stress level.