Персона: Скуратов, Владимир Алексеевич
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Институт ядерной физики и технологий
Цель ИЯФиТ и стратегия развития - создание и развитие научно-образовательного центра мирового уровня в области ядерной физики и технологий, радиационного материаловедения, физики элементарных частиц, астрофизики и космофизики.
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Владимир Алексеевич
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Теперь показываю 1 - 10 из 99
- ПубликацияТолько метаданныеThe influence of stopping power and temperature on latent track formation in YAP and YAG(2019) Janse, van, Vuuren, A.; O'Connell, J. H.; Aralbayeva, G.; Dauletbekova, A.; Saifulin, M. M.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2018 Elsevier B.V. Transmission electron microscopy techniques were used to analyse the effect of swift heavy ion irradiation on both yttrium aluminium perovskite (YAP) YAlO3, and yttrium aluminium garnet (YAG) Y3Al5O12 single crystals. The crystals were irradiated with Kr, Xe and Bi ions with energies ranging from 107 to 1030 MeV. These ions have electronic stopping powers in the range from 11 to 41 keV/nm. The ion fluences were all within the non-overlapping regime for latent ion tracks i.e. 1011–1012 cm−2. A number of crystals were also irradiated at different temperatures of 80, 300 and 1000 K at a fixed stopping power. Latent ion tracks with an amorphous core were observed in all samples. The track diameters were seen to increase with increasing stopping power. Track diameters only increase by a significant amount as a result of irradiation temperature at 1000 K, whereas the diameters at 80 and 300 K differ only slightly. Ion tracks in YAG were also found to be larger than those in YAP at comparable stopping powers. It was found that on average 10 keV/nm of extra energy input is required to produce ion tracks in YAP with diameters similar to those in YAG. The results also suggest that the complexity of the crystal structure plays a significant role in the formation of ion tracks in these crystals.
- ПубликацияТолько метаданныеLatent tracks in bulk yttrium-iron garnet crystals irradiated with low and high velocity krypton and xenon ions(2019) O'Connell, J. H.; Janse, van, Vuuren, A.; Kirilkin, N. S.; Zdorovets, M. V.; Saifulin, M. M.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2018 Elsevier B.V. Bulk yttrium-iron garnet (YIG) single crystals have been irradiated with swift Kr and Xe ions having energies from 0.4 to 22.8 MeV/u and electronic stopping powers from 8.9 to 28.9 keV/nm near the irradiated surface. Transmission electron microscopy (TEM) has been used for direct observation of non-overlapping amorphous latent tracks in the near surface region of the irradiated bulk YIG crystals. The amorphous track radii observed in this work have been compared with previously reported data from direct and indirect measurements. It was found that the thickness of the sample subjected to swift heavy ion irradiation does not significantly affect the resulting amorphous track size observed by TEM in YIG. The results also support previously observed consistency between direct TEM and indirect Rutherford backscattering in channelling mode (RBS/C) and Mossbauer spectroscopy (MS) methods for amorphous track evaluation in YIG when electronic stopping power is greater than ∼13 keV/nm, which is sufficient to create cylindrical amorphous tracks by high velocity ions (E > 10 MeV/u). Indirect methods provide underestimated values compared to TEM when the electronic stopping power is below ∼13 keV/nm, for which discrete amorphous tracks are supposed to be formed by high velocity ions.
- ПубликацияТолько метаданныеEffect of the electronic kinetics on graphitization of diamond irradiated with swift heavy ions and fs-laser pulses(2019) Khmelnitski, R. A.; Kononenko, V. V.; O'Connell, J. H.; Syrykh, G. F.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2018 Elsevier B.V. Diamond preliminary damaged with neutrons was irradiated with swift heavy ions (SHI, 1030 MeV 209Bi) decelerated in the electronic stopping regime as well as with fs-laser pulses. The initial excess electronic energy densities appearing in the nanometric vicinity of the SHI trajectories and within the absorbing layers in laser spots were comparable (∼1024 eV cm−3). Graphitization of diamond in the central parts of the lased spots was observed above the threshold fluence of 15–30 J/cm−2. It was also found that the lower threshold fluence is required for initiating graphitization as well as destruction of the pre-damaged crystal by laser pulses in comparison to that for undamaged diamond. This indicates a noticeable effect of an existing defect ensemble on the kinetics of diamond transformations in laser spots. However, X-ray diffraction, atomic-force microscopy, and electron microscopy detected no graphitic domains within the SHI-irradiated pre-damaged crystal. The research demonstrated that the density of the initial excess electronic energy cannot be treated as the sole parameter governing subsequent structure transformations in diamond. Large differences between the spatial as well as temporal scales finally results in different pathways of the relaxation kinetics of this excess energy in laser spots and SHI tracks in diamond.
- ПубликацияТолько метаданныеLatent ion tracks in amorphous and radiation amorphized silicon nitride(2020) Janse, van, Vuuren, A.; Ibrayeva, A. D.; O'Connell, J. H.; Mutali, A.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2020 Elsevier B.V.The microstructure of 265, 402 and 710 MeV Bi ion induced latent tracks in amorphous thin films of silicon nitride is studied using HRSTEM combined with EELS techniques. The results are compared with latent ion tracks in 220 MeV Xe and 710 MeV Bi irradiated polycrystalline silicon nitride, which was amorphized as a result of irradiation with swift heavy ions only. The results suggest that the track sizes are weakly dependent on defect structure of Si3N4. 710 MeV Bi ions induce tracks with radii that are similar in both amorphous and radiation-amorphized Si3N4, 1.5 ± 0.3 nm and 1.4 ± 0.1 nm, respectively. The situation for Xe is not as clear cut most likely due to the much higher irradiation fluence as compared to Bi.
- ПубликацияТолько метаданныеAnalysis of the microstructural evolution of silicon nitride irradiated with swift Xe ions(2020) Janse, van, Vuuren, A.; Ibrayeva, A. D.; Zdorovets, M. V.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2019 Elsevier Ltd and Techna Group S.r.l.The evolution of 220 MeV Xe ion induced radiation damage in polycrystalline Si3N4 is studied, within the fluence range 5 × 1011– 2 × 1014 cm−2, using transmission electron microscopy techniques. These irradiation conditions allow for the study of track morphology in both crystalline and in radiation-amorphized Si3N4. The average track size in the polycrystalline samples is 1.9 ± 0.4 nm and 3.1 ± 0.5 nm in the radiation-amorphized samples. The larger track sizes in the radiation-amorphized material is in agreement with predictions of the inelastic thermal spike model and the role of thermal conductivity in latent track formation.
- ПубликацияТолько метаданныеInfrared photoluminescence from GeO[SiO2] and GeO[SiO] solid alloy layers irradiated with swift heavy Xe ions(2020) Cherkova, S. G.; Volodin, V. A.; Stoffel, M.; Rinnert, H.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2020 Elsevier B.V.Germanium silicate suboxide films deposited from GeO/SiO and GeO/SiO2 precursors onto Si(001) substrates using evaporation in high vacuum were modified by swift heavy ions. The films were irradiated by 167 MeV Xe+26 ions with fluences varying from 1011 to 1013 cm−2. We report photoluminescence in the infrared range both at low and at room temperature, which is most probably due to defect-induced radiative transitions in the films.
- ПубликацияТолько метаданныеThermal transport and optical spectroscopy in 710-MeV Bi ion irradiated LiF crystals(2020) Koshkinbayeva, A.; Abdullaev, A.; Nurekeyev, Z.; Wang, Y.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2020 Elsevier B.V.We present thermal conductivity measurements of lithium fluoride single crystals irradiated by 710 MeV Bi ions at fluences ranging between 1010 and 1013 cm−2. The thermal transport degradation due to irradiation damage was examined across two depths regions, on nanometer and micrometer scales, by picosecond time-domain thermoreflectance and modulated continuum wave thermoreflectance methods, respectively. The proliferation of swift heavy ion-induced structural defects (color centers) was characterized using optical absorption and photoluminescence spectroscopies. Klemens thermal model was applied to correlate the concentrations of color center defects to thermal conductivity reduction in irradiated LiF crystals.
- ПубликацияТолько метаданныеInsights into different stages of formation of swift heavy ion tracks(2020) Rymzhanov, R. A.; Medvedev, N.; O'Connell, J. H.; Janse, van, Vuuren, A.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2020 Elsevier B.V.This review summarizes our results on effects of different stages of the formation kinetics of swift heavy ion (SHI) tracks on final structural changes. The developed multiscale approach describes in detail the formation of individual tracks and inter-track interaction in various amorphizable (Y3Al5O12, Mg2SiO4) and non-amorphizable (Al2O3, MgO) dielectrics. A comparison between the modeling and high-resolution transmission electron microscopy analysis of SHI irradiated samples allows to validate the developed model and to investigate links between the basic properties of the materials and features of the kinetics of structural transformations of the targets. We outline an influence and importance of each successive stage of excitation and relaxation on final observable structure modifications within tracks, starting from the SHI induced electronic excitation, electrons and holes transport, energy exchange with the target lattice, transient excitation and relaxation of the atomic system, and ultimate damage formation.
- ПубликацияТолько метаданныеRadiation hardness studies of pin-diode detectors irradiated with heavy ions(2020) Krutul, K.; Napiorkowski, P. J.; Hadynska-Klek, K.; Wrzosek-Lipska, K.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2020 Jagellonian University. All rights reserved.Evaluation of the properties of a set of PIN-diode-type semiconductor detectors was performed at the Heavy Ion Laboratory University of Warsaw in Poland with the α particles from 241Am. In order to monitor the radiation damage process in a controlled conditions, the in-beam irradiation experiments were performed using heavy-ion beams: 12C and 20Ne at HIL in Warsaw, and 132Xe at JINR in Dubna. The properties of the irradiated PIN-diode detectors were tested using the positron annihilation spectroscopy. The preliminary results of the experiments are presented.
- ПубликацияОткрытый доступВРЕМЯ-РАЗРЕШЕННАЯ ФОТОЛЮМИНЕСЦЕНЦИЯ Al2O3, ОБЛУЧЕННОГО ТЯЖЕЛЫМИ ИОНАМИ С ЭНЕРГИЕЙ 1.2 – 3 МэВ/АЕМ(НИЯУ МИФИ, 2021) Маматова, М.; Скуратов, В. А.; Олейничак, А.; Даулетбекова, А. К.; Гиниятова, Ш. Г.; Скуратов, Владимир АлексеевичTime Correlated Single Photon Counting technique has been used to study the luminescence decay in Al2O3 irradiated with swift heavy ions. As was found, picosecond laser pulse excitation at 445 nm enhances broad overlapped emission bands ranging from 490 to 750 nm with lifetimes gradually increasing from 7 ns (500 nm) to τ = 9 ns (640 nm). The nature of this luminescence is associated with radiative recombination of F2 2+-centers and F2 2+-centers + Cr impurity.