Publication: MODELING OF CO-DEPOSITION OF HYDROGEN WITH SPUTTERED METALS
Дата
2019
Авторы
Krat, S.
Gasparyan, Yu.
Vasina, Ya.
Prishvytsin, A.
Pisarev, A.
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НИЯУ МИФИ
Аннотация
Hydrogen accumulation in fusion devices is a serious issue from the viewpoint of radiation safety, as the total amount of radioactive tritium is strictly controlled. It also affects plasma parameters, as hydrogen accumulated in the device can be released during the discharge due to the plasma-wall interaction. One of the main channels for hydrogen accumulation is co-deposition, wherein hydrogen is deposited onto a surface together with particles of the wall material previously eroded from some other area of the fusion device’s wall by plasma. Such co-deposition can lead to accumulation of thick layers of material containing large amounts of hydrogen in hard to reach areas of the installations, such as pump lines or shadowed areas of the divertor in tokamak devices. The hydrogen content in such codeposited layers can reach tens of atomic percent, and, in the case of hydrogen active materials, such as carbon, even exceed unity. Hydrogen content in such films depends strongly on a number of co-deposition parameters, such as the deposition rate, temperature of the surface on which co-deposition occurs, hydrogen flux to the surface during deposition and others. This makes purely empirical approach to prediction of hydrogen accumulation in codeposited layers in fusion devices very difficult requiring exhaustive experimental testing in the full range of parameters that can occur in fusion devices. Such approach is not always feasible or economically viable, especially when attempting to predict hydrogen accumulation in future devices. Because of this, an approach is preferable that could provide quantitative predictions via computationally cheap predictive modeling of plasma-wall interactions.
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Цитирование
Modeling of co-deposition of hydrogen with sputtered metals [Text]. / Krat S. [et al.] // Взаимодействие ионов с поверхностью ВИП: труды XXIV Международной конференции Том 1. - 2019. - С. 54-57