Publication: Long-term transient radiation effects in high-speed signal switches implemented in 0.1 um E/D pHEMT process
Дата
2019
Авторы
Kuznetsov, A.
Elesin, V.
Usachev, N.
Chukov, G.
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Аннотация
The transient radiation effects in 0.1 mu m E/D pHEMT high-speed signal switches have been investigated. It was shown that a signal switch transient recovery time caused by pulsed irradiation can exceed 100 ms due to a switch control driver's functional upset.
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Цитирование
Long-term transient radiation effects in high-speed signal switches implemented in 0.1 um E/D pHEMT process / Kuznetsov, A [et al.] // 29TH INTERNATIONAL CRIMEAN CONFERENCE: MICROWAVE and TELECOMMUNICATION TECHNOLOGY (CRIMICO2019). - 2019. - 30. - 10.1051/itmconf/20193010004