Персона: Чуков, Георгий Викторович
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Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе.
Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.
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Георгий Викторович
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- ПубликацияОткрытый доступВозможность применения алгоритмов машинного обучения для прогнозирования качества ЭКБ И РЭА(2023) Колосова, А. С.; Каменева, А. С. ; Чуков, Г. В. ; Никифоров, А. Ю. ; Каменева, Анна Сергеевна; Чуков, Георгий Викторович; Никифоров, Александр Юрьевич; Колосова, Анна СергеевнаРассмотрены основные алгоритмы и методы машинного обучения и проведен анализ возможности их применения для оценки качества как основного элемента обеспечения доверенности выпускаемой электронной компонентной базы (ЭКБ) и радиоэлектронной аппаратуры (РЭА). Приводятся примеры успешного применения данных алгоритмов для улучшения таких показателей качества ЭКБ как надежность, стойкость к внешним воздействующим факторам и др. При проведении исследований стойкости ЭКБ к внешним воздействующим факторам, необходимой является процедура идентификации образцов ЭКБ методом рентгеноскопии, для выявления возможной неоднородности в конструкции образцов, принадлежащих к одной партии. Неоднородность партии может влиять на показатели надежности и стойкости к внешним воздействующим факторам, в связи с чем актуальной задачей является построение надежной системы идентификации. В статье предложен подход к решению задачи поиска неоднородности партии при идентификации образцов ЭКБ с помощью рентгеноскопии, в том числе как метода обеспечения доверенности, с помощью сверточной нейронной сети и алгоритмов кластеризации.
- ПубликацияТолько метаданныеD-mode pHEMT 0.5 um Process Characterization to Wide-Band LNA Design(2019) Sotskov, D. I.; Usachev, N. A.; Elesin, V. V.; Kuznetsov, A. G.; Amburkin, K. M.; Chukov, G. V.; Titova, M. I.; Zidkov, N. M.; Сотсков, Денис Иванович; Усачев, Николай Александрович; Елесин, Вадим Владимирович; Кузнецов, Александр Геннадьевич; Амбуркин, Константин Михайлович; Чуков, Георгий Викторович; Жидков, Никита Михайлович© 2019 IEEE.Results of domestic D-mode pHEMT 0.5 μm process characterization obtained during the design and testing of the single power supply wide-band low noise amplifier (LNA) are present. The simulation and test results demonstrate that designed cascode LNA has operating frequency range up to 3.5 GHz, power gain above 15 dB, noise figure below 2.2 dB, output linearity above than 17 dBm and power consumption less than 325 mW. Potential immunity of LNA to total ionizing dose and destructive single event effects exceed 300 krad and 60 MeV·cm2/mg respectively.
- ПубликацияТолько метаданныеThe Microwave Test and Measurement System for On-wafer Investigation under Irradiation(2022) Amburkin, K.; Kuznetsov, A.; Usachev, N.; Chukov, G.; Elesin, V.; Sotskov, D.; Усачев, Николай Александрович; Чуков, Георгий Викторович; Елесин, Вадим Владимирович; Сотсков, Денис Иванович© 2022 IEEE.The Microwave automated test and measurement system (ATMS) for on-wafer total ionizing dose and dose rate effects investigations is described. The ATMS is based on Cascade PM5 probe station and measurement hardware providing on-wafer investigations of RF and MW ICs with operating frequencies up to 67 GHz. The ATMS is equipped with radiation sources: RIK-0401 X-Ray Source and Radon-8M Laser Source. Dosimetry of radiation sources provided by calibration researches methodologies is described. All measurement hardware and radiation sources are interconnected into single work network controlled by PC with specialized software. The ATMS is used for radiation characterization of RF ICs, IP-blocks, and test structures during an on-wafer investigation. The results of ATMS approbation during 180 nm SOI CMOS process characterization are present.
- ПубликацияТолько метаданныеThe Problems of Microassemblies Constructional Adaptation for SEE Heavy Ion Testing(2022) Gritsaenko, D.; Tararaksin, A.; Glazunova, E.; Murygin, A.; Yanenko, A.; Chukov, G.; Яненко, Андрей Викторович; Чуков, Георгий Викторович© 2022 IEEE.In this work we consider possible approaches to microassemblies constructional adaptation of various functional groups and various designs for heavy ion testing. Using power supplies as an example, we present an algorithm that minimizes the loss of samples during test preparation without losing test informativity. In many cases it is preferable to carry out the preparation in collaboration with the device developer.
- ПубликацияОткрытый доступНаучно-методические и аппаратно-программные средства контроля работоспособности современных изделий твердотельной СВЧ электроники при воздействии ионизирующих излучений(НИЯУ МИФИ, 2013) Чуков, Г. В.; Чуков, Георгий Викторович; Елесин, В. В.
- ПубликацияТолько метаданныеSOI CMOS, SiGe BiCMOS, GaAs HBT and GaAs PHEMT Technologies Characterization for Radiation-Tolerant Microwave Applications(2021) Sotskov, D. I.; Kuznetsov, A. G.; Elesin, V. V.; Usachev, N. A.; Chukov, G. V.; Nikiforov, A. Y.; Сотсков, Денис Иванович; Кузнецов, Александр Геннадьевич; Елесин, Вадим Владимирович; Усачев, Николай Александрович; Чуков, Георгий Викторович; Никифоров, Александр Юрьевич© 2021 IEEE.Radiation-oriented (RO-) and microwave (MW) characterization of the several process technologies - CMOS silicon-on-insulator (SOI) 180 nm process, CMOS 90 nm process, SiGe BiCMOS 0.42/0.25 μm process, GaAs heterojunction bipolar transistor (HBT) 2 μm process and GaAs pseudomorphic high electron mobility transistor (PHEMT) 0.5 μm process, which suitable for the development of radiation-tolerance transceiver integrated circuits with operating frequencies up to 30 GHz are presented. The results of MW-characterization showed two process technologies manufacturing in "foundry"mode - CMOS SOI 180 nm and CMOS 90 nm potentiality for the development of transceiver ICs with operating frequencies above 3 GHz and 12 GHz respectively. Obtained experimental results allow to determine radiation-tolerance indicators for the total ionizing dose, neutrons, impulse exposure and heavy ions and specify critical elements and IP-block fragments for given processes. Experimental data can be used at the first step of reasonable choice of process technologies for radiation-tolerant transceiver design.
- ПубликацияТолько метаданныеThe Optimal Estimation of Single Event Effects Sensitivity Parameters Using a Focused Laser Source and Heavy Ion Cyclotron on Example of a Library of Analog IP Units(2021) Borisov, A. Y.; Novikov, A. A.; Petrun, N. L.; Nefedova, A. A.; Chukov, G. V.; Петрунь, Наталья Леонидовна; Чуков, Георгий Викторович© 2021 IEEE.The sensitivity parameters based on the single event effects (SEE) for a library consisting of 51 analog and analog-to-digital IP units manufactured using CMOS/SOI technology with design standards of 180 nm were evaluated. The use of a pulsed picosecond focused laser facility "PICO-4"in determining the sensitivity parameters made it possible to minimize the use of a heavy ion cyclotron. When a focused laser source and a heavy ion cyclotron are used together, the location of the most sensitive areas on the crystal is determined, which is impossible when using only a cyclotron, while the error in determining the threshold linear energy transfer for the occurrence of SEE is reduced. Using a focused laser source, sensitive regions of IP units with threshold values of linear energy losses that are unattainable when conducting an experiment on a heavy ion cyclotron are determined.
- ПубликацияТолько метаданныеA Practical Approach to Underground UHF Channel Characterization(2021) Elesina, V. V.; Kuznetsov, A. G.; Chukov, G. V.; Elesin, V. V.; Usachev, N. A.; Кузнецов, Александр Геннадьевич; Чуков, Георгий Викторович; Елесин, Вадим Владимирович; Усачев, Николай Александрович© 2021 IEEE.Radio frequency identification systems (RFID) are widely used for monitoring and localization of underground infrastructure objects: pipelines, power, and communication networks. Wireless underground sensor networks (WUSN) are the promising application areas that cover a number of fields: agriculture, mining, environmental control, etc. A progress in semiconductor technologies has opened up new opportunities for developing cheap and compact monolithic ultra-high frequency (UHF) receiver and transmitter integrated circuits - basic building blocks of RFID and WUSN systems. Read range (RR), the path loss (PL) and the bit error rate (BER) are the main characteristics of RFID and WUSN communication channel. The dielectric properties of the soil, determined by the composition and moisture, affect the electromagnetic wave (EMW) propagation that leads to significant PL and limits RR. In this work, a practical approach to UHF underground channel characterization, based on the modified Friis model and the vector network measurements is proposed. The modeling and measurements issues are discussed, that are important for the path loss prediction in the soil with different composition and moisture.
- ПубликацияТолько метаданныеThe Electrical Bias Influence on the Total Ionizing Dose Degradation of the MOST Parameters(2021) Borisov, A. Y.; Borisov, A. Y.; Nefedova, A. A.; Chukov, G. V.; Чуков, Георгий Викторович© 2021 IEEE.power MOSFET are widely used in spacecraft equipment set. During the lifetime, which reaches 15 years or more for modern and promising spacecrafts, in space radiation environment the equipment is exposed to significant impacts of total ionizing dose (TID) effects, which leads to degradation of the parameters of the electronic components used, this may lead to the loss of the spacecraft and early termination of the space mission. In this case, the rate of TID-degradation of the parameters is largely depends on the electrical mode of the components during the irradiation. The article considers the influence of various electrical modes of the gate of a power n-channel MOSFET on the rate of TID-degradation of one of the most radiation-sensitive parameters - the threshold voltage [1], [2]. Investigations were carried out in the following electrical modes: constant gate-source voltage in the range from -20 V to +20 V; rectangular signals with different values of frequency, duty cycle, as well as with different values of the upper and lower voltage levels. During the irradiation process, the dependence of the drain current on the gate-to-source voltage was periodically monitored for each sample, the shift of which to the area of negative values of the gate-to-source voltage made it possible to evaluate the transistor TID-hardness in each of the considered modes. The results of investigations allow identifying the most critical electric mode n-channel MOSFET with ionizing radiation of outer space, as well as to assess the strength level of the transistor during irradiation in one of the studied conditions based on data on persistence, defined in the most critical mode [3].
- ПубликацияОткрытый доступLong-term transient radiation effects in high-speed signal switches implemented in 0.1 um E/D pHEMT process(2019) Kuznetsov, A.; Elesin, V.; Usachev, N.; Chukov, G.; Кузнецов, Александр Геннадьевич; Елесин, Вадим Владимирович; Усачев, Николай Александрович; Чуков, Георгий ВикторовичThe transient radiation effects in 0.1 mu m E/D pHEMT high-speed signal switches have been investigated. It was shown that a signal switch transient recovery time caused by pulsed irradiation can exceed 100 ms due to a switch control driver's functional upset.