Publication:
Long-term transient radiation effects in high-speed signal switches implemented in 0.1 um E/D pHEMT process

dc.contributor.authorKuznetsov, A.
dc.contributor.authorElesin, V.
dc.contributor.authorUsachev, N.
dc.contributor.authorChukov, G.
dc.contributor.authorКузнецов, Александр Геннадьевич
dc.contributor.authorЕлесин, Вадим Владимирович
dc.contributor.authorУсачев, Николай Александрович
dc.contributor.authorЧуков, Георгий Викторович
dc.date.accessioned2024-11-21T18:45:55Z
dc.date.available2024-11-21T18:45:55Z
dc.date.issued2019
dc.description.abstractThe transient radiation effects in 0.1 mu m E/D pHEMT high-speed signal switches have been investigated. It was shown that a signal switch transient recovery time caused by pulsed irradiation can exceed 100 ms due to a switch control driver's functional upset.
dc.identifier.citationLong-term transient radiation effects in high-speed signal switches implemented in 0.1 um E/D pHEMT process / Kuznetsov, A [et al.] // 29TH INTERNATIONAL CRIMEAN CONFERENCE: MICROWAVE and TELECOMMUNICATION TECHNOLOGY (CRIMICO2019). - 2019. - 30. - 10.1051/itmconf/20193010004
dc.identifier.doi10.1051/itmconf/20193010004
dc.identifier.urihttps://www.doi.org/10.1051/itmconf/20193010004
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000568227400141
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/19564
dc.relation.ispartof29TH INTERNATIONAL CRIMEAN CONFERENCE: MICROWAVE and TELECOMMUNICATION TECHNOLOGY (CRIMICO2019)
dc.titleLong-term transient radiation effects in high-speed signal switches implemented in 0.1 um E/D pHEMT process
dc.typeProceedings Paper
dspace.entity.typePublication
oaire.citation.volume30
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relation.isAuthorOfPublication608226cb-7326-48db-8860-0267814b0820
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