Publication: Application of effective LET approach for modern CMOS devices
Дата
2019
Авторы
Akhmetov, A. O.
Bobrovsky, D. V.
Smolin, A. A.
Chumakov, A. I.
Sogoyan, A. V.
Journal Title
Journal ISSN
Volume Title
Издатель
Аннотация
© 2019 IEEE.Applicability of effective LET concept to SEE testing of modern CMOS devices was investigated. Heavy ion irradiations of four CMOS ICs were performed for a wide range of LET values and angles of incidence.
Описание
Ключевые слова
Цитирование
Application of effective LET approach for modern CMOS devices / Akhmetov, A.O. [et al.] // 2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019. - 2019. - 10.1109/RADECS47380.2019.9745667
URI
https://www.doi.org/10.1109/RADECS47380.2019.9745667
https://www.scopus.com/record/display.uri?eid=2-s2.0-85128539340&origin=resultslist
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https://openrepository.mephi.ru/handle/123456789/19646
https://www.scopus.com/record/display.uri?eid=2-s2.0-85128539340&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000848160100062
https://openrepository.mephi.ru/handle/123456789/19646