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Application of effective LET approach for modern CMOS devices

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dc.contributor.authorAkhmetov, A. O.
dc.contributor.authorBobrovsky, D. V.
dc.contributor.authorSmolin, A. A.
dc.contributor.authorChumakov, A. I.
dc.contributor.authorSogoyan, A. V.
dc.contributor.authorБобровский, Дмитрий Владимирович
dc.contributor.authorЧумаков, Александр Иннокентьевич
dc.contributor.authorСогоян, Армен Вагоевич
dc.date.accessioned2024-11-21T19:13:36Z
dc.date.available2024-11-21T19:13:36Z
dc.date.issued2019
dc.description.abstract© 2019 IEEE.Applicability of effective LET concept to SEE testing of modern CMOS devices was investigated. Heavy ion irradiations of four CMOS ICs were performed for a wide range of LET values and angles of incidence.
dc.identifier.citationApplication of effective LET approach for modern CMOS devices / Akhmetov, A.O. [et al.] // 2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019. - 2019. - 10.1109/RADECS47380.2019.9745667
dc.identifier.doi10.1109/RADECS47380.2019.9745667
dc.identifier.urihttps://www.doi.org/10.1109/RADECS47380.2019.9745667
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85128539340&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000848160100062
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/19646
dc.relation.ispartof2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019
dc.titleApplication of effective LET approach for modern CMOS devices
dc.typeConference Paper
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