Персона: Швецов-Шиловский, Иван Иванович
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The Effects of the External Conditions of CMOS IC Functioning on Latchup Occurrence under Uniform Laser Irradiation
© 2021 IEEE.The paper concerns experimental results on external conditions such as temperature, voltage supply, current limit, and features of the power circuit on latchup occurrence under uniform laser irradiation.
Mechanisms of Initiation of Unstable Latchup Effects in CMOS ICs
© 2019, Pleiades Publishing, Ltd.Abstract: The results of research on nonstationary latchup effects (LEs) under the influence of heavy charged particles and ionizing radiation pulses, which are spontaneously counteracted depending on the operating conditions, are presented. This behavior is caused by the effects of the rail span collapse inside the complementary metal-oxide-system (CMOS) of very large scale integrated (VLSI) circuits. The experimental studies are carried out on both the ion accelerator and the laser facilities.
Nonstable Latchups in CMOS ICs Under Pulsed Laser Irradiation
This article concerns experimental and simulation results on nonstable latchups (SLs) in CMOS integrated circuits (ICs) under pulsed laser irradiation. Different transient responses in elements of the p-n-p-n structure and irregular ionization distribution on the IC surface are the main reasons for non-SLs. Radiation experimental test results are presented as well as a discussion of non-SL mechanisms.
TID Impact on SEL Sensitivity in the Case of High Latchup Holding Voltage
© 2021 IEEE.In an Integrated Circuit with high SEL holding voltage, pulsed-laser radiation sensitivity was found to change due to TID irradiation. The impact of TID on the DUT SEL holding voltage and SEL sensitivity was investigated.