Персона: Мармалюк, Александр Анатольевич
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InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900-920 nm) with broadened asymmetric waveguides and improved current-voltage characteristics
© 2021 Kvantovaya Elektronika and IOP Publishing Limited.Semiconductor lasers based on double separate-confinement InGaAs/AlGaAs/GaAs heterostructures with a broadened waveguide are studied. The experimentally obtained samples of lasers with undoped and doped waveguide layers are compared. The differences in their current-voltage characteristics are analysed. It is found that a decrease in the series resistance and the cutoff voltage of the current-voltage characteristic makes it possible to delay the beginning of the output optical power saturation and increase the efficiency of the studied semiconductor lasers to 70% - 72%.
Comparison of AlGaInAs/InP semiconductor lasers (l = 1450 - 1500 nm) with ultra-narrow and strongly asymmetric waveguides
© 2021 Kvantovaya Elektronika and IOP Publishing LimitedSemiconductor lasers based on AlGaInAs/InP heterostructures with ultra-narrow and asymmetric waveguides are comparatively studied. It is shown that the use of these waveguides with a simultaneous increase in the quantum well depth makes it possible to increase output powers. Such lasers based on both strongly asymmetric and ultra-narrow waveguides with a stripe contact width of 100 mm demonstrate an output power of 5 W (at pump currents of 11.5 and 14 A, respectively) in a continuous-wave regime at room temperature and a wavelength of 1450 - 1500 nm.
Comparative Study of GaAs/GaInP and GaAs/AlGaAs Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy
This paper presents results of a comparative experimental study aimed at producing GaAs/GaInP and GaAs/AlGaAs quantum wells (QWs) by metalorganic vapor phase epitaxy. The photoluminescence signal of the GaAs/GaInP QWs is shown to have a higher intensity (by a factor of 50-100) and, at the same time, a larger width (by a factor of similar to 2.5) in comparison with the GaAs/AlGaAs QWs. We analyze different approaches to controlling emission spectra of these QWs.
Semiconductor AlGaInAs/InP lasers (l = 1450 - 1500 nm) with a strongly asymmetric waveguide
© 2021 Turpion Ltd.. All rights reserved.Semiconductor lasers based on AlGaInAs/InP heterostructures with a strongly asymmetric waveguide are studied. It is shown that the use of such a waveguide simultaneously with an increased quantum well energy depth provides conditions for increasing the output laser power. The semiconductor AlGaInAs/InP lasers based on a strongly asymmetric waveguide with a stripe contact width of 100 mm demonstrated an output optical power of 5 W (pump current 11.5 A) in a continuouswave regime and 19 W (100 A) in a pulsed regime (100 ns, 1 kHz) at a wavelength of 1450 - 1500 nm at room temperature. The obtained data are compared with the output characteristics of lasers based on a symmetric waveguide.