Publication: InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900-920 nm) with broadened asymmetric waveguides and improved current-voltage characteristics
Дата
2021
Авторы
Volkov, N. A.
Bagaev, T. A.
Sabitov, D. R.
Andreev, A. Yu.
Marmalyuk, A. A.
Journal Title
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Аннотация
© 2021 Kvantovaya Elektronika and IOP Publishing Limited.Semiconductor lasers based on double separate-confinement InGaAs/AlGaAs/GaAs heterostructures with a broadened waveguide are studied. The experimentally obtained samples of lasers with undoped and doped waveguide layers are compared. The differences in their current-voltage characteristics are analysed. It is found that a decrease in the series resistance and the cutoff voltage of the current-voltage characteristic makes it possible to delay the beginning of the output optical power saturation and increase the efficiency of the studied semiconductor lasers to 70% - 72%.
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InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900-920 nm) with broadened asymmetric waveguides and improved current-voltage characteristics / Volkov, N.A. [et al.] // Quantum Electronics. - 2021. - 51. - № 10. - P. 905-908. - 10.1070/QEL17628
URI
https://www.doi.org/10.1070/QEL17628
https://www.scopus.com/record/display.uri?eid=2-s2.0-85117181495&origin=resultslist
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https://openrepository.mephi.ru/handle/123456789/24814
https://www.scopus.com/record/display.uri?eid=2-s2.0-85117181495&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000706856400008
https://openrepository.mephi.ru/handle/123456789/24814