Publication: InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900-920 nm) with broadened asymmetric waveguides and improved current-voltage characteristics
dc.contributor.author | Volkov, N. A. | |
dc.contributor.author | Bagaev, T. A. | |
dc.contributor.author | Sabitov, D. R. | |
dc.contributor.author | Andreev, A. Yu. | |
dc.contributor.author | Marmalyuk, A. A. | |
dc.contributor.author | Мармалюк, Александр Анатольевич | |
dc.date.accessioned | 2024-11-29T21:32:44Z | |
dc.date.available | 2024-11-29T21:32:44Z | |
dc.date.issued | 2021 | |
dc.description.abstract | © 2021 Kvantovaya Elektronika and IOP Publishing Limited.Semiconductor lasers based on double separate-confinement InGaAs/AlGaAs/GaAs heterostructures with a broadened waveguide are studied. The experimentally obtained samples of lasers with undoped and doped waveguide layers are compared. The differences in their current-voltage characteristics are analysed. It is found that a decrease in the series resistance and the cutoff voltage of the current-voltage characteristic makes it possible to delay the beginning of the output optical power saturation and increase the efficiency of the studied semiconductor lasers to 70% - 72%. | |
dc.format.extent | С. 905-908 | |
dc.identifier.citation | InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900-920 nm) with broadened asymmetric waveguides and improved current-voltage characteristics / Volkov, N.A. [et al.] // Quantum Electronics. - 2021. - 51. - № 10. - P. 905-908. - 10.1070/QEL17628 | |
dc.identifier.doi | 10.1070/QEL17628 | |
dc.identifier.uri | https://www.doi.org/10.1070/QEL17628 | |
dc.identifier.uri | https://www.scopus.com/record/display.uri?eid=2-s2.0-85117181495&origin=resultslist | |
dc.identifier.uri | http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000706856400008 | |
dc.identifier.uri | https://openrepository.mephi.ru/handle/123456789/24814 | |
dc.relation.ispartof | Quantum Electronics | |
dc.title | InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900-920 nm) with broadened asymmetric waveguides and improved current-voltage characteristics | |
dc.type | Article | |
dspace.entity.type | Publication | |
oaire.citation.issue | 10 | |
oaire.citation.volume | 51 | |
relation.isAuthorOfPublication | a2274cc1-6ae2-4b20-a7bd-edb50d75fca3 | |
relation.isAuthorOfPublication.latestForDiscovery | a2274cc1-6ae2-4b20-a7bd-edb50d75fca3 | |
relation.isOrgUnitOfPublication | c8407a6f-7272-450d-8d99-032352c76b55 | |
relation.isOrgUnitOfPublication.latestForDiscovery | c8407a6f-7272-450d-8d99-032352c76b55 |