Publication: Comparison of AlGaInAs/InP semiconductor lasers (l = 1450 - 1500 nm) with ultra-narrow and strongly asymmetric waveguides
Дата
2021
Авторы
Volkov, N. A.
Svetogorov, V. N.
Ryaboshtan, Yu. L.
Andreev, A. Yu.
Marmalyuk, A. A.
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Аннотация
© 2021 Kvantovaya Elektronika and IOP Publishing LimitedSemiconductor lasers based on AlGaInAs/InP heterostructures with ultra-narrow and asymmetric waveguides are comparatively studied. It is shown that the use of these waveguides with a simultaneous increase in the quantum well depth makes it possible to increase output powers. Such lasers based on both strongly asymmetric and ultra-narrow waveguides with a stripe contact width of 100 mm demonstrate an output power of 5 W (at pump currents of 11.5 and 14 A, respectively) in a continuous-wave regime at room temperature and a wavelength of 1450 - 1500 nm.
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Comparison of AlGaInAs/InP semiconductor lasers (l = 1450 - 1500 nm) with ultra-narrow and strongly asymmetric waveguides / Volkov, N.A. [et al.] // Quantum Electronics. - 2021. - 51. - № 4. - P. 283-286. - 10.1070/QEL17540
URI
https://www.doi.org/10.1070/QEL17540
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https://openrepository.mephi.ru/handle/123456789/23893
https://www.scopus.com/record/display.uri?eid=2-s2.0-85104230754&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000635537700001
https://openrepository.mephi.ru/handle/123456789/23893