Publication: Semiconductor AlGaInAs/InP lasers (l = 1450 - 1500 nm) with a strongly asymmetric waveguide
Дата
2021
Авторы
Volkov, N. A.
Andreev, A. Yu.
Yarotskaya, I. V.
Ryaboshtan, Yu. L.
Marmalyuk, A. A.
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Аннотация
© 2021 Turpion Ltd.. All rights reserved.Semiconductor lasers based on AlGaInAs/InP heterostructures with a strongly asymmetric waveguide are studied. It is shown that the use of such a waveguide simultaneously with an increased quantum well energy depth provides conditions for increasing the output laser power. The semiconductor AlGaInAs/InP lasers based on a strongly asymmetric waveguide with a stripe contact width of 100 mm demonstrated an output optical power of 5 W (pump current 11.5 A) in a continuouswave regime and 19 W (100 A) in a pulsed regime (100 ns, 1 kHz) at a wavelength of 1450 - 1500 nm at room temperature. The obtained data are compared with the output characteristics of lasers based on a symmetric waveguide.
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Semiconductor AlGaInAs/InP lasers (l = 1450 - 1500 nm) with a strongly asymmetric waveguide / Volkov, N.A. [et al.] // Quantum Electronics. - 2021. - 51. - № 2. - P. 133-136. - 10.1070/QEL17480
URI
https://www.doi.org/10.1070/QEL17480
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https://www.scopus.com/record/display.uri?eid=2-s2.0-85100857185&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000635535900006
https://openrepository.mephi.ru/handle/123456789/23670