Персона: Московская, Юлия Марковна
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Predictive Analysis of Microcircuits’ Radiation Hardness in the Fabrication Process. II. Selection of Test Objects and the Statistical Processing of the Obtained Results
2024, Moskovskaya, Y. M., Boychenko, D. V., Московская, Юлия Марковна, Бойченко, Дмитрий Владимирович
Predictive Analysis of Microcircuits’ Radiation Hardness in the Fabrication Process. I. System and Implementation Algorithms for Various Product Categories
2024, Moskovskaya, Y. M., Boychenko, D. V., Московская, Юлия Марковна, Бойченко, Дмитрий Владимирович
Nonparametric Statistical Analysis of Radiation Hardness Threshold Variation in CMOS IC Wafer Lots Series with the Aim of Process Monitoring
2019, Moskovskaya, Y. M., Sogojan, A. V., Nikiforov, A. Y., Bogdanov, Y. I., Bogdanova, N. A., Fastovets, D. V., Moskovskaya, Y. M., Sogoyan, A. V., Nikiforov, A. Y., Московская, Юлия Марковна, Согоян, Армен Вагоевич, Никифоров, Александр Юрьевич
© 2019 IEEE.Nonparametric statistical criteria usage has been considered for estimating radiation hardness threshold variation of CMOS IC wafer lots series. It gives one the possibility to assess every newly manufactured IC lot by a small sample size to determine whether test sample and the whole lot statistically belong to the previously tested general reference group of samples or not. The approach allows us to minimize the overirradiation factor and obtain a statistically reliable radiation test result even for small-size test samples.