2021, Muzafarov, M. V., Kolosova, A. S., Pechenkin, A. A., Davydov, G. G., Gromova, P. S., Boychenko, D. V., Demidova, A. V., Музафаров, Михаил Валентинович, Колосова, Анна Сергеевна, Печенкин, Александр Александрович, Давыдов, Георгий Георгиевич, Бойченко, Дмитрий Владимирович

© 2021 IEEE.A description of the system for setting a lowered environment temperature based on Peltier modules is presented. The development was carried out taking into account the peculiarities of the radiation test: minimum distance from exposure source to DUT; stand-alone use during long-term radiation test; minimum overall dimensions, transportability and flexibility when conducting tests on various exposure sources. Cooling box consists of 3-level stacked assembly of the Peltier modules, which is cooled by liquid refrigerant. Control of the assembly of Peltier modules was performed according to proportional integral and differential algorithm, provided by microcontroller with feedbacks on Pt thermoresistors. The system provides temperature stabilization of the DUT up to 23×17×12 mm in size and with released heat power up to 0.4 W at minus (60 ± 3) °C. Temperature establishing time is less than 10 minutes. Typical power consumption of developed system is about 500W.

2021, Savchenkov, D. V., Davydov, G. G., Yanenko, A. V., Давыдов, Георгий Георгиевич, Яненко, Андрей Викторович

A method is described for localizing damaged areas on IC chip using ionization response maps. The method can provide some essential information to IC designers to help them improve its resistance to failures. © 2021 IEEE.

2019, Gromova, P. S., Davydov, G. G., Tararaksin, A. S., Kolosova, A. S., Boychenko, D. V., Давыдов, Георгий Георгиевич, Тарараксин, Александр Сергеевич, Колосова, Анна Сергеевна, Бойченко, Дмитрий Владимирович

© 2019 IEEE.Heavy-ion-induced single event burnout (SEB) is studied experimentally for several types of 4H-SiC Schottky power diodes with various bias voltages applied. Safe operating voltage area for each type was defined and analyzed. The comparison with Si power devices was carried out.

2021, Muzafarov, M. V., Kolosova, A. S., Pechenkin, A. A., Davydov, G. G., Gromova, P. S., Boychenko, D. V., Музафаров, Михаил Валентинович, Колосова, Анна Сергеевна, Печенкин, Александр Александрович, Давыдов, Георгий Георгиевич, Бойченко, Дмитрий Владимирович

2021, Nikiforov, A. Y., Gorbunov, M. S., Smolin, A. A., Davydov, G. G., Boychenko, D. V., Никифоров, Александр Юрьевич, Давыдов, Георгий Георгиевич, Бойченко, Дмитрий Владимирович

© 2021 IEEE.We provide a brief evolution trends overview of the modern microelectronic devices and its radiation behaviour, focusing on new structures and materials effects due to Total Ionizing Dose (TID) and Single Event effects (SEE) in CMOS elements. Evolution of test facilities driven by these changes in radiation behaviour of modern devices is also considered.

2009, Давыдов, Г. Г., Давыдов, Георгий Георгиевич, Никифоров, А. Ю.