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Печенкин, Александр Александрович

Организационные подразделения

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Печенкин

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Александр Александрович

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Теперь показываю 1 - 10 из 26

Только метаданные
Methodical Approach for SEL Tolerance Confirmation of CMOS ICs at Low Temperatures
(2021) Novikova, M. M.; Novikov, A. A.; Pechenkin, A. A.; Lukashin, V. P.; Oblova, E. N.; Gritsaenko, A. R.; Protasov, D. E.; Tararaksin, A. S.; Печенкин, Александр Александрович; Лукашин, Владислав Павлович; Грицаенко, Альбина Радиковна; Протасов, Дмитрий Евгеньевич; Тарараксин, Александр Сергеевич
An approach for SEL sensitivity estimation using heavy ions at room temperature and laser facilities both at room and subzero temperatures is proposed. The results of comparison approach approbation are also presented. © 2021 IEEE.
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Comparative Assessment of Digital and UHF Optoelectronic Transceivers Radiation Hardness
(2019) Mozhaev, R. K.; Cherniak, M. E.; Pechenkin, A. A.; Ulanova, A. V.; Nikiforov, A. Y.; Можаев, Роман Константинович; Печенкин, Александр Александрович; Уланова, Анастасия Владиславовна; Никифоров, Александр Юрьевич
© 2019 IEEE.A method for radiation hardness evaluation of digital and microwave transmitting-receiving optoelectronic modules is presented. The technical aspects of parameters monitoring during exposure are described. The most vulnerable components of optoelectronic modules are identified.
Только метаданные
Evaluation of Organic Light-Emitting Diodes Total Ionizing Dose Sensitivity in Temperature Range
(2021) Mozhaev, R. K.; Pechenkin, A. A.; Ukolov, D. S.; Ulanova, A. V.; Nikiforov, A. Y.; Можаев, Роман Константинович; Печенкин, Александр Александрович; Уланова, Анастасия Владиславовна; Никифоров, Александр Юрьевич
© 2021 IEEE.The paper presents the comparative results of spectrum degradation organic light-emitting diode with different dominant wavelengths. The diodes were exposed with stationary gamma-irradiation at room and low temperatures. The research has shown moderate degradation of the light-emission spectrum when exposed at room temperature and significant degradation at low temperature. The greatest deterioration in the optical parameters was observed for organic light-emitting diodes with blue and white light emission color.
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Automation of Laser Single-Event Effect Testing of Integrated Circuits for Space Missions
(2021) Tsirkov, A. N.; Savchenkov, D. V.; Novikov, A. A.; Pechenkin, A. A.; Цирков, Артем Николаевич; Печенкин, Александр Александрович
© 2021 IEEE.a division of labor plays significant role in the efficiency of laser SEE Testing. The highest efficiency can be achieved when testers fulfill their roles in a global task: one is engaged in debugging and monitoring the testing progress at the facility, another one participates in the preparation and performance monitoring of the device under test (DUT). This article describes the architecture of our software for SEE testing that consists of two parts: the one responsible for the functional testing of the DUT and another one responsible for the SEE testing logic. Separating these two parts allows them to be developed independently by different specialists. The DUT part of software controls a wide variety of equipment including National Instruments PXI/PXIe modules which are commonly used for functional testing of the devices under test. The laser SEE testing part of software controls all parts of the laser facility (laser beam positioning and pulse synchronization, visualization of exposure area, etc.) and the acquisition of laser SEE testing data. One of the main points of this paper is the idea of communication between the apps on different platforms (Microsoft.NET and NI LabVIEW) over local area network.
Только метаданные
Radiation Hardness Evaluation of LEDs Based on InGaN, GaN and AlInGaP Heterostructures
(2019) Ukolov, D. S.; Chirkov, N. A.; Mozhaev, R. K.; Pechenkin, A. A.; Можаев, Роман Константинович; Печенкин, Александр Александрович
© 2019 IEEE.The radiation hardness results of light emitting diodes (LED) in green, blue and red regions of the spectrum and in white, based on InGaN, GaN and AlInGaP structures are presented. The technical aspects of monitoring parameters during exposure are described, and LEDs response to various radiation exposures are given.
Только метаданные
An Automated System of Lowered Temperature Setting for Long-Term Radiation Experiments
(2021) Muzafarov, M. V.; Kolosova, A. S.; Pechenkin, A. A.; Davydov, G. G.; Gromova, P. S.; Boychenko, D. V.; Demidova, A. V.; Музафаров, Михаил Валентинович; Колосова, Анна Сергеевна; Печенкин, Александр Александрович; Давыдов, Георгий Георгиевич; Бойченко, Дмитрий Владимирович
© 2021 IEEE.A description of the system for setting a lowered environment temperature based on Peltier modules is presented. The development was carried out taking into account the peculiarities of the radiation test: minimum distance from exposure source to DUT; stand-alone use during long-term radiation test; minimum overall dimensions, transportability and flexibility when conducting tests on various exposure sources. Cooling box consists of 3-level stacked assembly of the Peltier modules, which is cooled by liquid refrigerant. Control of the assembly of Peltier modules was performed according to proportional integral and differential algorithm, provided by microcontroller with feedbacks on Pt thermoresistors. The system provides temperature stabilization of the DUT up to 23×17×12 mm in size and with released heat power up to 0.4 W at minus (60 ± 3) °C. Temperature establishing time is less than 10 minutes. Typical power consumption of developed system is about 500W.
Только метаданные
Non-Contact Temperature Setting System for VLSI with High Heat Dissipation
(2022) Kostyuchenko, D.; Bobrovskiy, D.; Pechenkin, A.; Marfin, V.; Tsirkov, A.; Karakozov, A.; Костюченко, Денис Сергеевич; Бобровский, Дмитрий Владимирович; Печенкин, Александр Александрович; Цирков, Артем Николаевич
© 2022 IEEE.It was required to develop a non-contact cooling system for conducting radiation research of VLSI with high heat generation. During the development process, various available methods for cooling products were considered and tested: immersion cooling and a cold-box - these methods did not bring the desired result.As a result, a cooling system was assembled based on the process of blowing the VLSI crystal with high-pressure compressed air. The system was based on an air compressor. The compressor was supplemented with external sensors to control the temperature of the samples and a control system for the output air flow. The entire process of setting the sample temperature was automatically controlled from a personal computer. The software and hardware parts of the solution are presented in this article.This non-contact cooling system has shown itself well in the conditions of real VLSI radiation research at physical facilities. However, in the future it is planned to improve a number of parameters in order to develop this cooling system to increase its efficiency.
Только метаданные
Pulsed Laser Single-Event Effect Simulation in AD8400 using Two-Photon Absorption
(2022) Egorov, A. N.; Mavritskii, O. B.; Pechenkin, A. A.; Savchenkov, D. V.; Kholina, M. S.; Егоров, Андрей Николаевич; Маврицкий, Олег Борисович; Печенкин, Александр Александрович; Холина, Марта Сергеевна
© 2022 IEEE.The results of laser single-event effect (SEE) simulation in digital potentiometer AD8400, using the two-photon absorption (TPA) of tightly focused femtosecond 1200 nm laser radiation are presented. Comparative measurements obtained by the single-photon absorption (SPA) of picosecond 1064 nm laser radiation in the same device revealed the improved 3D-spatial resolution of TPA compared to SPA-based pulsed laser testing. The effective depth of single event latchup (SEL) sensitive layer estimation was calculated from experimental results.
Только метаданные
Laser scanning confocal IR microscopy for non-destructive testing of semiconductors
(2022) Ukolov, D.; Baluev, A.; Gromova, P.; Pechenkin, A.; Mozhaev, R.; Балуев, Арсений Андреевич; Печенкин, Александр Александрович; Можаев, Роман Константинович
© 2022 IEEE.The article discusses characteristics of the laser scanning confocal IR microscope being developed for applications of non-destructive testing of semiconductor structures. The existing methods and analysis facilities of integrated circuits are described. In this review, the method of laser confocal IR-microscopy is considered. The laser scanning confocal IR-microscope will make it possible to reconstruct the internal structure of an integrated circuit and identify its materials without special environmental conditions during research, for example, such as vacuum chamber or x-ray facility.
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Single-Mode W-Type Optical Fiber Stable Against Bending and Radiation
(2020) Eron'yan, M. A.; Kulesh, A. Y.; Reutskii, A. A.; Devet'yarov, D. R.; Pechenkin, A. A.; Печенкин, Александр Александрович
© 2020, Pleiades Publishing, Ltd.Abstract: It is shown that single-mode fluorosilicate optical fibers fabricated with the aid of modified chemical vapor deposition exhibit a significant decrease in the radiation resistance when 1 mol % GeO2 is introduced into the silica-glass core. Elimination of chlorine and OH group impurities in the silica glass of the core of the fluorosilicate single-mode fiber leads to a relatively low level of radiation-induced attenuation. Prior to radiation processing, the loss factors of optical fiber are 0.18 and 0.3 dB/km at wavelengths of 1.55 and 1.31 μm, respectively. The dependence of optical loss of such fibers on the bend diameter ranging from 6 to 12 mm is studied.