Персона:
Сорокин, Иван Александрович

Организационные подразделения

Организационная единица

Институт лазерных и плазменных технологий

Стратегическая цель Института ЛаПлаз – стать ведущей научной школой и ядром развития инноваций по лазерным, плазменным, радиационным и ускорительным технологиям, с уникальными образовательными программами, востребованными на российском и мировом рынке образовательных услуг.

Фамилия

Сорокин

Имя

Иван Александрович

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Результаты поиска

Теперь показываю 1 - 9 из 9

Только метаданные
Etching of "Microwire-on-Insulator"-Type Structures
(2022) Shustin, E. G.; Kolodko, D. V.; Luzanov, V. A.; Mirgorodskaya, E. N.; Sorokin, I. A.; Колодко, Добрыня Вячеславич; Сорокин, Иван Александрович
Только метаданные
Plasma behavior in e×h pulse discharge
(2020) Rohmanenkov, A.; Solodovnikov, A.; Mamedov, N.; Maslennikov, S.; Sorokin, I.; Kolodko, D.; Мамедов, Никита Вадимович; Масленников, Сергей Павлович; Сорокин, Иван Александрович; Колодко, Добрыня Вячеславич
© 2020 IEEE.The paper presents the results of experiments and PIC (particle-in-cell) simulations of ignition characteristics of miniature pulsed penning ion source. Also the dependence of the discharge current pulse on the gas pressure and magnetic field are presented. Plasma behavior (electron and ion density in axial and radial dimensional) depending on magnitude (and configuration) of the magnetic field and pressure (working gas is deuterium) was shown.
Только метаданные
Planar hollow cathode sputtering with asymmetrical voltage supply
(2023) Sorokin, I. A.; Kolodko, D. V.; Сорокин, Иван Александрович; Колодко, Добрыня Вячеславич
This article studies a planar hollow cathode discharge (HCD) with an asymmetric negative potential applied to parallel cathodes. The hollow cathode effect is preserved when an additional high voltage bias is applied to one of cathodes. For the argon pressures of 15, 20 and 60 Pa, the current-voltage characteristics of the HCD were obtained with an extra bias voltage applied on the iron cathode/target. The paper describes the sputtering system based on a HCD, consisting of two cathodes: a flat target and a tungsten mesh located at a distance of 7 mm, through which the deposited material passes. At the argon pressure of 40 Pa, the dynamics of the local plasma parameters and the iron deposition rate on a substrate under floating potential located at a distance of 40 mm from the grid were measured. The asymmetrical voltage supply in hollow cathode sputtering lead to a significant increase in the iron sputtering rate (from 2 to 16 nm/min), which is associated with both an increase in the plasma density and the sputtering coefficient of the target material. Sputtering system based on a planar HCD is advantageous due to the absence of magnetic field, which facilitates deposition of soft magnetic materials. © 2022 Elsevier Ltd
Только метаданные
On the possibility of indirect measurement of the thin carbon films thickness using energy-dispersive analysis
(2021) Sorokin, I. A.; Kolodko, D. V.; Сорокин, Иван Александрович; Колодко, Добрыня Вячеславич
© 2021 Elsevier B.V.The article describes theoretical feasibility of a technique for indirect measurement of the thin carbon films thickness using energy dispersive x-ray spectroscopy. The method is based on measuring the ratio of the characteristic radiation from the substrate material below the analyzed carbon film and from the material of the additional covering layer. The technique was compared with a well-known method based on measuring the characteristic substrate material radiation. The possibilities and limits of applicability of the energy dispersive spectroscopy for the thickness determination of thin carbon films were qualitatively determined by Monte Carlo numerical simulation method of characteristic x-ray spectra.
Только метаданные
Diffusion Transport of Target Material for a Planar Asymmetrical Hollow Cathode Sputtering System
(2025) Butnyakov, D. A.; Sorokin,I.A.; Kolodko, D. V.; Бутняков, Даниил Алексеевич; Сорокин, Иван Александрович; Колодко, Добрыня Вячеславич
Только метаданные
MEPhIST-0 Tokamak for Education and Research
(2023) Krat, S.; Prishvitsyn, A.; Alieva, A.; Vinitskiy, E.; Ulasevich, D.; Izarova, A.; Podolyako, F.; Belov, A.; Chernenko, A.; Sinelnikov, D.; Bulgadaryan, D.; Sorokin, I.; Gubskiy, K.; Kaziev, A.; Kolodko, D.; Tumarkin, V.; Isakova, A.; Grunin, A.; Begrambekov, L.; Melnikov, A.; Крат, Степан Андреевич; Пришвицын, Александр Сергеевич; Виницкий, Егор Александрович; Уласевич, Даниил Львович; Изарова, Анастасия Дмитриевна; Подоляко, Федор Сергеевич; Белов, Андрей Сергеевич; Черненко, Андрей Сергеевич; Синельников, Дмитрий Николаевич; Сорокин, Иван Александрович; Губский, Константин Леонидович; Казиев, Андрей Викторович; Колодко, Добрыня Вячеславич; Тумаркин, Владимир Александрович; Беграмбеков, Леон Богданович; Мельников, Александр Владимирович; Исакова, Анастасия Сергеевна
Только метаданные
Deposition of Metal-Doped Diamond-Like Films Using a Hollow Cathode Discharge
(2020) Sorokin, I. A.; Kolodko, D. V.; Krasnobaev, K. I.; Сорокин, Иван Александрович; Колодко, Добрыня Вячеславич
© 2020, Pleiades Publishing, Inc.Abstract—A simple technique is presented for producing diamond-like films with copper impurity by sputtering the surface of a copper cathode with argon ions in a glow discharge with a hollow cathode with simultaneous chemical deposition diamond-like films on its surface. It was shown that a small (up to 1: 1000) admixture of propane at the pressure of the plasma forming gas of 40 Pa does not affect the plasma parameters, however, it allows you to vary the relative copper content in the diamond-like film.
Только метаданные
Growth of Thin Graphite Films on a Dielectric Substrate using Heteroepitaxial Synthesis
(2020) Sorokin, I. A.; Kolodko, D. V.; Luzanov, V. A.; Shustin, E. G.; Сорокин, Иван Александрович; Колодко, Добрыня Вячеславич
A technique for growing thin graphite films on a dielectric substrate by annealing the Al2O3(0001)/Ni(111)/ta-C structure has been optimized. This technique is based on catalytic decomposition of hydrocarbons on the surface of a single-crystal catalyst metal film on a dielectric substrate and subsequent diffusion and crystallization of carbon between the metal film and the substrate. A thin graphite film with a low density of crystal-structure defects is obtained on the dielectric substrate after chemical etching of the metal film.
Только метаданные
Model of a Plasma Layer Formed by an Electron Beam
(2020) Tarakanov, V. P.; Shustin, E. G.; Kolodko, D. V.; Sorokin, I. A.; Колодко, Добрыня Вячеславич; Сорокин, Иван Александрович
© 2020, Pleiades Publishing, Ltd.Abstract—: Results are presented of the particle-in-cell numerical simulations by the KARAT code of the formation of a plasma–beam discharge in the absence of both the longitudinal magnetic field and the initial plasma. Oscillations of the electric field generated by the plasma–beam instability in the electron beam region almost do not affect the plasma at the periphery of the system. Simulation results are compared to the results obtained earlier by a simplified model and to the results of test experiments. The spatial distributions of the plasma density and electron temperature qualitatively agree with the experimental results.