Персона:
Приходько, Кирилл Евгеньевич

Организационные подразделения

Организационная единица

Цель ИЯФиТ и стратегия развития - создание и развитие научно-образовательного центра мирового уровня в области ядерной физики и технологий, радиационного материаловедения, физики элементарных частиц, астрофизики и космофизики.

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Приходько

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Кирилл Евгеньевич

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Теперь показываю 1 - 8 из 8

Только метаданные
Creation of ultrathin niobium nitride films at temperatures less than 100 °c
(2020) Goncharov, B. V.; Gurovich, B. A.; Dementyeva, M. M.; Stolyarov, V. L.; Prikhodko, K. E.; Приходько, Кирилл Евгеньевич
© Published under licence by IOP Publishing Ltd.Thin NbN films were synthesized by a method of magnetron sputtering of solid Nb targets by nitrogen ions at temperatures less than 100 °C on substrates of the sapphire. The dependences of electrical resistance of films on the temperature in range 4.2 K - 300 K were measured. Volt-ampere characteristics and critical current density vs film thickness of films were made at a temperature of 4.2 K. The microstructure and film-depth chemical composition of thin films were investigated by analytical methods of the transmission electronic microscopy (HRTEM, EELS) on a cross-section samples made by the FIB technique. HRTEM and EELS study showed the Nb0.84N phase and poly-crystal structure of niobium nitride films. It was found that the critical current density falls down by an order of magnitude when the film thickness was less than 4 nanometers.
Только метаданные
The Influence of Integrated Resistors Formed under Ion Irradiation on the Superconducting Transitions of Niobium Nitride Nanoconductors
(2020) Gurovich, B. A.; Goncharov, B. V.; Dement'eva, M. M.; Kutuzov, L. V.; Prikhod'ko, K. E.; Приходько, Кирилл Евгеньевич
© 2020, Pleiades Publishing, Ltd.Abstract: The influence of integrated resistors formed under irradiation in a nanowire on its superconducting transitions has been investigated. Niobium nitride nanowires with widths of 75–20 000 nm fabricated from a 5-nm-thick NbN film on single-crystal silicon substrates coated with a 0.3-μm-thick thermal silicon oxide layer and on sapphire substrates have been considered. The influence of a built-in resistive region on the critical current of transition from the superconducting to normal state is described.
Только метаданные
Control of Superconducting Transitions in Nanowires Using Galvanically Uncoupled Gates for Designing Superconductor-Based Electronic Devices
(2020) Gurovich, B. A.; Kutuzov, L. V.; Goncharov, B. V.; Prikhod'ko, K. E.; Приходько, Кирилл Евгеньевич
© 2020, Pleiades Publishing, Ltd.Abstract: A possibility of contactless switching of an NbN nanowire from superconducting to normal state by passing a current through a gate located at a certain distance from the nanowire is demonstrated. The gate, being isolated from the nanowire by an Al2O3 layer, contains an integrated resistance formed by ion irradiation. Dependences of the minimum power released in the gate that is sufficient for nanowire to pass to the normal state on the dc current through the nanowire are experimentally obtained. A signal inverter containing three successive cascades is developed based on this principle. This design shows that the proposed approach can be used to form a logic element base for cryogenic computing.
Только метаданные
Radiation nanotechnology for selective modifications of atomic composition and properties of thin film materials
(2019) Dementyeva, M. M.; Gurovich, B. A.; Kutuzov, L. V.; Goncharov, B. V.; Prikhodko, K. E.; Приходько, Кирилл Евгеньевич
© Published under licence by IOP Publishing Ltd.We have demonstrated using of ion beam irradiation to control the atomic composition and properties of thin film materials by three different ways. Selective removal of atoms (SRA) technique allows us to transform Co3O4 to Co. By EELS on cross-section samples in STEM mode it was shown that target depth recovery profile has no monotonic character that proved the radiation nature of SRA process. Selective displacement of Atoms (SDA) technique under oxygen ion irradiation was used to control the critical current of ultrathin superconductive NbN film that can have an implementation during new cryogenic logic device design.
Только метаданные
Creation of thin superconducting MoCN thin film by cathode sputtering technique as a basic material for functional cryogenic nanoelements
(2019) Goncharov, B. V.; Gurovich, B. A.; Dementyeva, M. M.; Olshansky, E. D.; Prikhodko, K. E.; Приходько, Кирилл Евгеньевич
© Published under licence by IOP Publishing Ltd.Thin MoCN films were synthesized by a method of cathode sputtering of mosaic Mo-C targets by nitrogen ions at temperature of 800°C on substrates of the oxidized silicon. The temperature dependences of electrical resistance of the films in the range of 4.2-300°K were measured. Volt-ampere characteristics of the films and critical current density vs film thickness were obtained at a temperature of 4.2°K. The microstructure and film-depth chemical composition profiles of thin films were investigated by analytical techniques of the transmission electron microscopy (HRTEM, EELS) on a cross-section samples made by the focused ion beam (FIB). It was established that MoCN thin film at a thickness of 8 nm contained MoC and Mo5N6 layers. The high density of critical current in these films indicated prospects of their application in the field of cryogenic nanotechnologies.
Только метаданные
Creation of Thin Films of NbN at Room Temperature of the Substrate
(2021) Gurovich, B. A.; Goncharov, B. V.; Kutuzov, L. V.; Stolyarov, L. V.; Prikhod'ko, K. E.; Приходько, Кирилл Евгеньевич
© 2021, Pleiades Publishing, Ltd.Abstract: Magnetron sputtering is used for preparing thin NbN films. The films are deposited on sapphire substrates at temperatures from 20 to 300°C. The superconducting transition temperature for various samples is in the range of 8–14 K depending on the substrate temperature during deposition. The critical current density jc is in the range of 0.8–8 MA/cm2, which makes it possible to use these films to create multilayer structures due to the absence of anneals, which each underlying layer of structures is subjected to during the deposition of each subsequent layer.
Только метаданные
Integrated cryogenic resistors formed from NbN thin film under ion beam irradiation
(2019) Gurovich, B. A.; Goncharov, B. V.; Dementyeva, M. M.; Kutuzov, L. V.; Prikhodko, K. E.; Приходько, Кирилл Евгеньевич
© Published under licence by IOP Publishing Ltd.Niobium nitride ultrathin films were synthesized by cathode sputtering technique. The cryogenic resistors built in the superconducting nanowire were formed using the radiation technology developed in National Research Centre "Kurchatov Institute". This technique was based on the transformation of NbN superconducting film to a normal state (at 4.2K) under the composite ion beam irradiation through the resistive mask. The formation of the cryogenic resistors in the broad range of values was demonstrated.
Только метаданные
Creation of Elements from NbN for Logical Devices of Classical Cryo-Computers
(2021) Gurovich, B. A.; Prikhodko, K. E.; Kutuzov, L. V.; Goncharov, B. V.; Приходько, Кирилл Евгеньевич
A method is described that allows one to reduce the critical current and switching power of a short nanowire from a superconducting state to a normal state by embedding a section of a normal metal into the nanowire. This effect results from the local heating of the superconducting wire due to the heat released in the normal metal. An integrated resistor is created from the original NbN using ion irradiation through a mask. The obtained values of switching powers allow designing multilayer logical elements without galvanic coupling for classical cryo-computers.