Publication: Creation of ultrathin niobium nitride films at temperatures less than 100 °c
Дата
2020
Авторы
Goncharov, B. V.
Gurovich, B. A.
Dementyeva, M. M.
Stolyarov, V. L.
Prikhodko, K. E.
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© Published under licence by IOP Publishing Ltd.Thin NbN films were synthesized by a method of magnetron sputtering of solid Nb targets by nitrogen ions at temperatures less than 100 °C on substrates of the sapphire. The dependences of electrical resistance of films on the temperature in range 4.2 K - 300 K were measured. Volt-ampere characteristics and critical current density vs film thickness of films were made at a temperature of 4.2 K. The microstructure and film-depth chemical composition of thin films were investigated by analytical methods of the transmission electronic microscopy (HRTEM, EELS) on a cross-section samples made by the FIB technique. HRTEM and EELS study showed the Nb0.84N phase and poly-crystal structure of niobium nitride films. It was found that the critical current density falls down by an order of magnitude when the film thickness was less than 4 nanometers.
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Creation of ultrathin niobium nitride films at temperatures less than 100 °c / Goncharov, B.V. [et al.] // IOP Conference Series: Materials Science and Engineering. - 2020. - 1005. - № 1. - 10.1088/1757-899X/1005/1/012023