Персона:
Приходько, Кирилл Евгеньевич

Организационные подразделения

Организационная единица

Цель ИЯФиТ и стратегия развития - создание и развитие научно-образовательного центра мирового уровня в области ядерной физики и технологий, радиационного материаловедения, физики элементарных частиц, астрофизики и космофизики.

Фамилия

Приходько

Имя

Кирилл Евгеньевич

Полная страница элемента

Результаты поиска

Теперь показываю 1 - 10 из 16

Только метаданные
The evolution of structure and magnetoimpedance characteristics of amorphous Co69Fe4Cr4Si12B11 microwires under heat treatment
(2020) Kutuzov, L. V.; Svetogorov, R. D.; Mashera, V. S.; Gorelikov, E. S.; Kozlov, I. V.; Elmanov, G. N.; Prikhodko, K. E.; Tarasov, B. A.; Mikhalchik, V. V.; Козлов, Илья Владимирович; Елманов, Геннадий Николаевич; Приходько, Кирилл Евгеньевич; Тарасов, Борис Александрович; Михальчик, Владимир Валерьевич
© 2019 Elsevier B.V.Amorphous Co69Fe4Cr4Si12B11 glass-coated microwires after heat treatment in the temperature range of 250–600 °C during 30 min were investigated. Changes of microstructure, phase composition, fracture morphology, and giant magnetoimpedance (GMI) properties were shown. It is confirmed that a significant increase in the GMI effect was possible not only due to the structural relaxation, but also as a result of phase transformations at the temperature close to the onset of crystallization. It is shown that at the very initial stage of the nucleation of Co nanocrystals, a sharp increase in circumferential diagonal GMI component was observed, a further increase in the amount of the crystalline Co phase was accompanied by degradation of this effect. The most significant GMI ratio was obtained for microwires annealed at 430 °C. At 450 °C and above, an irreversible decrease of the GMI ratio took place. It was caused by the formation of Co crystals, decrease in amount and composition change of the amorphous phase during primary and secondary crystallization. At the final stage of the Co crystals segregation the secondary crystallization of the residual amorphous phase occurred with formation of a metastable τ-phase with a Me23B6 type structure. Thermal stability of the τ-phase was analyzed.
Только метаданные
Creation of ultrathin niobium nitride films at temperatures less than 100 °c
(2020) Goncharov, B. V.; Gurovich, B. A.; Dementyeva, M. M.; Stolyarov, V. L.; Prikhodko, K. E.; Приходько, Кирилл Евгеньевич
© Published under licence by IOP Publishing Ltd.Thin NbN films were synthesized by a method of magnetron sputtering of solid Nb targets by nitrogen ions at temperatures less than 100 °C on substrates of the sapphire. The dependences of electrical resistance of films on the temperature in range 4.2 K - 300 K were measured. Volt-ampere characteristics and critical current density vs film thickness of films were made at a temperature of 4.2 K. The microstructure and film-depth chemical composition of thin films were investigated by analytical methods of the transmission electronic microscopy (HRTEM, EELS) on a cross-section samples made by the FIB technique. HRTEM and EELS study showed the Nb0.84N phase and poly-crystal structure of niobium nitride films. It was found that the critical current density falls down by an order of magnitude when the film thickness was less than 4 nanometers.
Только метаданные
The Influence of Integrated Resistors Formed under Ion Irradiation on the Superconducting Transitions of Niobium Nitride Nanoconductors
(2020) Gurovich, B. A.; Goncharov, B. V.; Dement'eva, M. M.; Kutuzov, L. V.; Prikhod'ko, K. E.; Приходько, Кирилл Евгеньевич
© 2020, Pleiades Publishing, Ltd.Abstract: The influence of integrated resistors formed under irradiation in a nanowire on its superconducting transitions has been investigated. Niobium nitride nanowires with widths of 75–20 000 nm fabricated from a 5-nm-thick NbN film on single-crystal silicon substrates coated with a 0.3-μm-thick thermal silicon oxide layer and on sapphire substrates have been considered. The influence of a built-in resistive region on the critical current of transition from the superconducting to normal state is described.
Только метаданные
Control of Superconducting Transitions in Nanowires Using Galvanically Uncoupled Gates for Designing Superconductor-Based Electronic Devices
(2020) Gurovich, B. A.; Kutuzov, L. V.; Goncharov, B. V.; Prikhod'ko, K. E.; Приходько, Кирилл Евгеньевич
© 2020, Pleiades Publishing, Ltd.Abstract: A possibility of contactless switching of an NbN nanowire from superconducting to normal state by passing a current through a gate located at a certain distance from the nanowire is demonstrated. The gate, being isolated from the nanowire by an Al2O3 layer, contains an integrated resistance formed by ion irradiation. Dependences of the minimum power released in the gate that is sufficient for nanowire to pass to the normal state on the dc current through the nanowire are experimentally obtained. A signal inverter containing three successive cascades is developed based on this principle. This design shows that the proposed approach can be used to form a logic element base for cryogenic computing.
Только метаданные
Radiation nanotechnology for selective modifications of atomic composition and properties of thin film materials
(2019) Dementyeva, M. M.; Gurovich, B. A.; Kutuzov, L. V.; Goncharov, B. V.; Prikhodko, K. E.; Приходько, Кирилл Евгеньевич
© Published under licence by IOP Publishing Ltd.We have demonstrated using of ion beam irradiation to control the atomic composition and properties of thin film materials by three different ways. Selective removal of atoms (SRA) technique allows us to transform Co3O4 to Co. By EELS on cross-section samples in STEM mode it was shown that target depth recovery profile has no monotonic character that proved the radiation nature of SRA process. Selective displacement of Atoms (SDA) technique under oxygen ion irradiation was used to control the critical current of ultrathin superconductive NbN film that can have an implementation during new cryogenic logic device design.
Только метаданные
Creation of thin superconducting MoCN thin film by cathode sputtering technique as a basic material for functional cryogenic nanoelements
(2019) Goncharov, B. V.; Gurovich, B. A.; Dementyeva, M. M.; Olshansky, E. D.; Prikhodko, K. E.; Приходько, Кирилл Евгеньевич
© Published under licence by IOP Publishing Ltd.Thin MoCN films were synthesized by a method of cathode sputtering of mosaic Mo-C targets by nitrogen ions at temperature of 800°C on substrates of the oxidized silicon. The temperature dependences of electrical resistance of the films in the range of 4.2-300°K were measured. Volt-ampere characteristics of the films and critical current density vs film thickness were obtained at a temperature of 4.2°K. The microstructure and film-depth chemical composition profiles of thin films were investigated by analytical techniques of the transmission electron microscopy (HRTEM, EELS) on a cross-section samples made by the focused ion beam (FIB). It was established that MoCN thin film at a thickness of 8 nm contained MoC and Mo5N6 layers. The high density of critical current in these films indicated prospects of their application in the field of cryogenic nanotechnologies.
Только метаданные
Advanced structure research methods of amorphous Co69Fe4Cr4Si12B11 microwires with giant magnetoimpedance effect: Part 1 – Crystallization kinetics and crystal growth
(2021) Svetogorov, R. D.; Chernavskii, P. A.; Lukyanchuk, A. A.; Shutov, A. M.; Elmanov, G. N.; Kozlov, I. V.; Irmagambetova, S. M.; Prikhodko, K. E.; Елманов, Геннадий Николаевич; Козлов, Илья Владимирович; Ирмагамбетова, Сауле Муханбетовна; Приходько, Кирилл Евгеньевич
© 2021 Elsevier B.V.The initial stage processes of nucleation and growth of crystalline phases in Co-based amorphous microwires in a glass shell were studied by processing kinetic curves using various theoretical models. The results of X-ray diffraction for research of the microstructure evolution at Synchrotron Radiation Source and High Resolution Transmission Electron Microscopy were considered. The study of the crystallization process kinetics was carried out by a non-conventional method, in particular based on data of sample magnetization changes over time and with temperature at a unique in situ vibromagnetometer. The analysis of the kinetic curves for isothermal and non-isothermal crystallization process led to the similar conclusions and made it possible to establish the values of the Avrami exponent for the initial stage of surface and bulk crystallization, to establish the dimensionality of crystal growth, and to conclude that there was no nucleation in the process of crystal growth. Based on the analysis of kinetic curves by three methods, the activation energy of the primary crystallization process was determined, its high value is associated with the presence of chromium in the alloy, which determines its nanocrystallization. The microstructure and shape of crystals were analyzed.
Только метаданные
Activator segregation and micro-luminescence properties in GAGG:Ce ceramics
(2021) Dosovitskiy, G.; Dubov, V.; Karpyuk, P.; Volkov, P.; Prikhodko, K.; Приходько, Кирилл Евгеньевич
© 2021ввCeramic scintillators are promising due to their potentially low cost. Here, we report on our study of Ce-doped ceramics. Typical garnet-type ceramics Gd2.97Ce0.03Al2Ga3O12 was fabricated for the study from co-precipitated powders by high-temperature sintering in air. Its structure and composition are characterized using Scanning Electron Microscope (SEM) imaging, Transmission Electron Microscopy (TEM), Electron Energy Loss Spectroscopy (EELS), Electron Backscattered Diffraction (EBSD) mapping, X-Ray Diffraction (XRD) and X-ray Absorption Near Edge Structure (XANES) measurements. The spatial distribution of luminescence properties at the micro-level is studied using scanning confocal microscopy. Cerium segregation at the grain boundaries was revealed by compositional characterization and is in line with enhanced Ce3+ photoluminescence observed at the boundaries. Meanwhile, no excess partitioning of Ce4+ ions at the grain boundaries is observed. It is found that most of Ce ions in the ceramics are stabilized in the state Ce3+, what is encouraging in view of the further development of GAGG:Ce ceramics as a promising luminescence material for lighting and scintillator application.
Только метаданные
Creation of Thin Films of NbN at Room Temperature of the Substrate
(2021) Gurovich, B. A.; Goncharov, B. V.; Kutuzov, L. V.; Stolyarov, L. V.; Prikhod'ko, K. E.; Приходько, Кирилл Евгеньевич
© 2021, Pleiades Publishing, Ltd.Abstract: Magnetron sputtering is used for preparing thin NbN films. The films are deposited on sapphire substrates at temperatures from 20 to 300°C. The superconducting transition temperature for various samples is in the range of 8–14 K depending on the substrate temperature during deposition. The critical current density jc is in the range of 0.8–8 MA/cm2, which makes it possible to use these films to create multilayer structures due to the absence of anneals, which each underlying layer of structures is subjected to during the deposition of each subsequent layer.
Только метаданные
Integrated cryogenic resistors formed from NbN thin film under ion beam irradiation
(2019) Gurovich, B. A.; Goncharov, B. V.; Dementyeva, M. M.; Kutuzov, L. V.; Prikhodko, K. E.; Приходько, Кирилл Евгеньевич
© Published under licence by IOP Publishing Ltd.Niobium nitride ultrathin films were synthesized by cathode sputtering technique. The cryogenic resistors built in the superconducting nanowire were formed using the radiation technology developed in National Research Centre "Kurchatov Institute". This technique was based on the transformation of NbN superconducting film to a normal state (at 4.2K) under the composite ion beam irradiation through the resistive mask. The formation of the cryogenic resistors in the broad range of values was demonstrated.