Publication:
Integrated cryogenic resistors formed from NbN thin film under ion beam irradiation

Дата
2019
Авторы
Gurovich, B. A.
Goncharov, B. V.
Dementyeva, M. M.
Kutuzov, L. V.
Prikhodko, K. E.
Journal Title
Journal ISSN
Volume Title
Издатель
Научные группы
Организационные подразделения
OrgUnit Logo
Организационная единица
Институт ядерной физики и технологий
Цель ИЯФиТ и стратегия развития - создание и развитие научно-образовательного центра мирового уровня в области ядерной физики и технологий, радиационного материаловедения, физики элементарных частиц, астрофизики и космофизики.
Выпуск журнала
Аннотация
© Published under licence by IOP Publishing Ltd.Niobium nitride ultrathin films were synthesized by cathode sputtering technique. The cryogenic resistors built in the superconducting nanowire were formed using the radiation technology developed in National Research Centre "Kurchatov Institute". This technique was based on the transformation of NbN superconducting film to a normal state (at 4.2K) under the composite ion beam irradiation through the resistive mask. The formation of the cryogenic resistors in the broad range of values was demonstrated.
Описание
Ключевые слова
Цитирование
Integrated cryogenic resistors formed from NbN thin film under ion beam irradiation / Gurovich, B.A. [et al.] // IOP Conference Series: Materials Science and Engineering. - 2019. - 699. - № 1. - 10.1088/1757-899X/699/1/012016
URI
https://www.doi.org/10.1088/1757-899X/699/1/012016
 https://www.scopus.com/record/display.uri?eid=2-s2.0-85078314590&origin=resultslist
 https://openrepository.mephi.ru/handle/123456789/19353
Коллекции
Публикации