Publication: Luminescent properties of GeO x thin films and GeO/SiO 2 heterostructures modified with swift heavy ions
Дата
2019
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© 2019 SPIE. The luminescent and structural properties of GeO x thin films and GeO/SiO 2 multilayer heterostructures, irradiated with 167 MeV Xe ions with fluencies up to 10 13 cm -2 , were studied. We report strong photoluminescence in visible range at room temperature, which is most probably due to Ge-related defect-induced radiative transitions. And infrared luminescence bands (from ∼0.8 eV to ∼1.2 eV) were observed in as-deposited and irradiated structures, which can be related to defects or defects complexes in Ge x Si y O 2 glass and partially in Si substrate. It was shown that swift heavy ion irradiation does not lead to the expected phase separation of germanium suboxide into germanium nanoclusters and GeO 2 , but causes the intermixing of GeO/SiO 2 layers with the formation of Ge-O-Si bonds.
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Luminescent properties of GeO x thin films and GeO/SiO 2 heterostructures modified with swift heavy ions / Cherkova, S.G. [et al.] // Proceedings of SPIE - The International Society for Optical Engineering. - 2019. - 11022. - 10.1117/12.2521696
URI
https://www.doi.org/10.1117/12.2521696
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https://www.scopus.com/record/display.uri?eid=2-s2.0-85063426834&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000464735700039
https://openrepository.mephi.ru/handle/123456789/16780