Publication: Nonthermal Mechanism of Defect Formation in the CdHgTe Semiconductor on Exposure to Soft X-rays
Дата
2019
Авторы
Sredin, V. G.
Ramakoti, R. S.
Anan'in, O. B.
Melekhov, A. P.
Gerasimov, I. A.
Bogdanov, G. S.
Novikov, I. K.
Frolova, I. V.
Dzhumaev, P. S.
Journal Title
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Аннотация
© 2019, Pleiades Publishing, Ltd.The effect of irradiation with soft X-rays produced by a laser plasma source equipped with an X-ray concentrator on the properties of the CdHgTe semiconductor are investigated. For this purpose, the mass concentration of atoms in the near-surface layer of the material is measured. It is demonstrated that the action of soft X-ray radiation leads to change in the solid-solution composition at the surface via a nonthermal mechanism and generates surface defects.
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Nonthermal Mechanism of Defect Formation in the CdHgTe Semiconductor on Exposure to Soft X-rays / Sredin, V.G. [et al.] // Physics of Atomic Nuclei. - 2019. - 82. - № 11. - P. 1571-1575. - 10.1134/S1063778819110188
URI
https://www.doi.org/10.1134/S1063778819110188
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https://openrepository.mephi.ru/handle/123456789/19501
https://www.scopus.com/record/display.uri?eid=2-s2.0-85082503556&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000520708000025
https://openrepository.mephi.ru/handle/123456789/19501