Publication:
Nonthermal Mechanism of Defect Formation in the CdHgTe Semiconductor on Exposure to Soft X-rays

dc.contributor.authorSredin, V. G.
dc.contributor.authorRamakoti, R. S.
dc.contributor.authorAnan'in, O. B.
dc.contributor.authorMelekhov, A. P.
dc.contributor.authorGerasimov, I. A.
dc.contributor.authorBogdanov, G. S.
dc.contributor.authorNovikov, I. K.
dc.contributor.authorFrolova, I. V.
dc.contributor.authorDzhumaev, P. S.
dc.contributor.authorРамакоти, Рави Шрираджа
dc.contributor.authorМелехов, Андрей Петрович
dc.contributor.authorГерасимов, Иван Александрович
dc.contributor.authorБогданов, Глеб Сергеевич
dc.contributor.authorНовиков, Игорь Кимович
dc.contributor.authorДжумаев, Павел Сергеевич
dc.date.accessioned2024-11-21T18:23:47Z
dc.date.available2024-11-21T18:23:47Z
dc.date.issued2019
dc.description.abstract© 2019, Pleiades Publishing, Ltd.The effect of irradiation with soft X-rays produced by a laser plasma source equipped with an X-ray concentrator on the properties of the CdHgTe semiconductor are investigated. For this purpose, the mass concentration of atoms in the near-surface layer of the material is measured. It is demonstrated that the action of soft X-ray radiation leads to change in the solid-solution composition at the surface via a nonthermal mechanism and generates surface defects.
dc.format.extentС. 1571-1575
dc.identifier.citationNonthermal Mechanism of Defect Formation in the CdHgTe Semiconductor on Exposure to Soft X-rays / Sredin, V.G. [et al.] // Physics of Atomic Nuclei. - 2019. - 82. - № 11. - P. 1571-1575. - 10.1134/S1063778819110188
dc.identifier.doi10.1134/S1063778819110188
dc.identifier.urihttps://www.doi.org/10.1134/S1063778819110188
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dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000520708000025
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/19501
dc.relation.ispartofPhysics of Atomic Nuclei
dc.titleNonthermal Mechanism of Defect Formation in the CdHgTe Semiconductor on Exposure to Soft X-rays
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue11
oaire.citation.volume82
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