Publication: Development of a 0.15 μm gaas phemt process design kit for low‐noise applications
Дата
2021
Авторы
Dobush, I. M.
Zykov, D. D.
Bragin, D. S.
Salnikov, A. S.
Vasil'evskii, I. S.
Gorelov, A. A.
Kargin, N. I.
Горелов, Андрей Алексеевич
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Аннотация
© 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/license s/by/4.0/).This work presents a process design kit (PDK) for a 0.15 μm GaAs pHEMT process for low‐noise MMIC applications developed for AWR Microwave Office (MWO). A complete set of basic elements is proposed, such as TaN thin film resistors and mesa‐resistors, capacitors, inductors, and transistors. The developed PDK can be used in technology transfer or education.
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Development of a 0.15 μm gaas phemt process design kit for low‐noise applications / Dobush, I.M. [et al.] // Electronics (Switzerland). - 2021. - 10. - № 22. - 10.3390/electronics10222775
URI
https://www.doi.org/10.3390/electronics10222775
https://www.scopus.com/record/display.uri?eid=2-s2.0-85118860582&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000725007100001
https://openrepository.mephi.ru/handle/123456789/24940
https://www.scopus.com/record/display.uri?eid=2-s2.0-85118860582&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000725007100001
https://openrepository.mephi.ru/handle/123456789/24940