Publication: AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier
Дата
2020
Авторы
Svetogorov, V. N.
Ryaboshtan, Y. L.
Ladugin, M. A.
Padalitsa, A. A.
Marmalyuk, A. A.
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Аннотация
Semiconductor lasers based on AlGaInAs/InP hetero-structures with an ultra-narrow waveguide and an increased electron barrier layer are developed. It is shown that the use of this waveguide in conjunction with profiled doping ensures a balance between internal optical losses and heat resistance. Additional use of strained wide-bandgap layers as blocking barriers limiting electron leakage from the active region makes it possible to increase the output power at the same pump current. The developed lasers with a stripe contact 100 mu m wide demonstrate at room temperature an output optical power of 4.0-4.4 W (pump current 14 A) in a continuous-wave regime and 15-17 W (100 A) in a pulsed regime (100 ns, 1 kHz) at wavelengths of 1450-1500 nm.
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Цитирование
AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier / Svetogorov, VN [et al.] // Quantum Electronics. - 2020. - 50. - № 12. - P. 1123-1125. - 10.1070/QEL17448
URI
https://www.doi.org/10.1070/QEL17448
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https://openrepository.mephi.ru/handle/123456789/22994
https://www.scopus.com/record/display.uri?eid=2-s2.0-85098238395&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000596825300008
https://openrepository.mephi.ru/handle/123456789/22994