Publication:
AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier

dc.contributor.authorSvetogorov, V. N.
dc.contributor.authorRyaboshtan, Y. L.
dc.contributor.authorLadugin, M. A.
dc.contributor.authorPadalitsa, A. A.
dc.contributor.authorMarmalyuk, A. A.
dc.contributor.authorМармалюк, Александр Анатольевич
dc.date.accessioned2024-11-27T15:38:28Z
dc.date.available2024-11-27T15:38:28Z
dc.date.issued2020
dc.description.abstractSemiconductor lasers based on AlGaInAs/InP hetero-structures with an ultra-narrow waveguide and an increased electron barrier layer are developed. It is shown that the use of this waveguide in conjunction with profiled doping ensures a balance between internal optical losses and heat resistance. Additional use of strained wide-bandgap layers as blocking barriers limiting electron leakage from the active region makes it possible to increase the output power at the same pump current. The developed lasers with a stripe contact 100 mu m wide demonstrate at room temperature an output optical power of 4.0-4.4 W (pump current 14 A) in a continuous-wave regime and 15-17 W (100 A) in a pulsed regime (100 ns, 1 kHz) at wavelengths of 1450-1500 nm.
dc.format.extentС. 1123-1125
dc.identifier.citationAlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier / Svetogorov, VN [et al.] // Quantum Electronics. - 2020. - 50. - № 12. - P. 1123-1125. - 10.1070/QEL17448
dc.identifier.doi10.1070/QEL17448
dc.identifier.urihttps://www.doi.org/10.1070/QEL17448
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85098238395&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000596825300008
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/22994
dc.relation.ispartofQuantum Electronics
dc.titleAlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue12
oaire.citation.volume50
relation.isAuthorOfPublicationa2274cc1-6ae2-4b20-a7bd-edb50d75fca3
relation.isAuthorOfPublication.latestForDiscoverya2274cc1-6ae2-4b20-a7bd-edb50d75fca3
relation.isOrgUnitOfPublicationc8407a6f-7272-450d-8d99-032352c76b55
relation.isOrgUnitOfPublication.latestForDiscoveryc8407a6f-7272-450d-8d99-032352c76b55
Файлы
Коллекции