Publication: Effect of thin heterogeneous functional nanolayers on electron transport in InGaAs-based quantum wells with high electron density (a review)
Дата
2019
Авторы
Vasil'Evskii, I. S.
Journal Title
Journal ISSN
Volume Title
Издатель
Аннотация
© Published under licence by IOP Publishing Ltd. A prospective improvement of InGaAs-based quantum well heterostructures design is possible towards the quantum treatment of electron subbands states and electron transport processes in the real structures with thin spatially inhomogeneous functional nanolayers. Insertion of nanosized GaAs, AlAs and InAs layers into quantum well/spacer/barrier layers or applying a graded In y Ga 1-y As channel can enhance electron transport properties and gives a novel degree of freedom for the quantum structures engineering. The review and original study for PHEMT/GaAs, HFET/GaAs and InP HEMT structures are discussed.
Описание
Ключевые слова
Цитирование
Vasil'Evskii, I. S. Effect of thin heterogeneous functional nanolayers on electron transport in InGaAs-based quantum wells with high electron density (a review) / Vasil'Evskii, I.S. // IOP Conference Series: Materials Science and Engineering. - 2019. - 475. - № 1. - 10.1088/1757-899X/475/1/012023