Publication:
Effect of thin heterogeneous functional nanolayers on electron transport in InGaAs-based quantum wells with high electron density (a review)

Простая страница элемента
dc.contributor.authorVasil'Evskii, I. S.
dc.contributor.authorВасильевский, Иван Сергеевич
dc.date.accessioned2024-11-20T09:50:18Z
dc.date.available2024-11-20T09:50:18Z
dc.date.issued2019
dc.description.abstract© Published under licence by IOP Publishing Ltd. A prospective improvement of InGaAs-based quantum well heterostructures design is possible towards the quantum treatment of electron subbands states and electron transport processes in the real structures with thin spatially inhomogeneous functional nanolayers. Insertion of nanosized GaAs, AlAs and InAs layers into quantum well/spacer/barrier layers or applying a graded In y Ga 1-y As channel can enhance electron transport properties and gives a novel degree of freedom for the quantum structures engineering. The review and original study for PHEMT/GaAs, HFET/GaAs and InP HEMT structures are discussed.
dc.identifier.citationVasil'Evskii, I. S. Effect of thin heterogeneous functional nanolayers on electron transport in InGaAs-based quantum wells with high electron density (a review) / Vasil'Evskii, I.S. // IOP Conference Series: Materials Science and Engineering. - 2019. - 475. - № 1. - 10.1088/1757-899X/475/1/012023
dc.identifier.doi10.1088/1757-899X/475/1/012023
dc.identifier.urihttps://www.doi.org/10.1088/1757-899X/475/1/012023
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85062722158&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/16659
dc.relation.ispartofIOP Conference Series: Materials Science and Engineering
dc.titleEffect of thin heterogeneous functional nanolayers on electron transport in InGaAs-based quantum wells with high electron density (a review)
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.issue1
oaire.citation.volume475
relation.isAuthorOfPublication8ce84220-3c34-4278-83e7-c79be7660fe9
relation.isAuthorOfPublication.latestForDiscovery8ce84220-3c34-4278-83e7-c79be7660fe9
relation.isOrgUnitOfPublication06e1796d-4f55-4057-8d7e-bb2f3b5676f5
relation.isOrgUnitOfPublication.latestForDiscovery06e1796d-4f55-4057-8d7e-bb2f3b5676f5
Файлы
Коллекции
Публикации