Publication: Estimation of errors of RADFET-based dosimeters
Дата
2020
Авторы
Podlepetsky, B. I.
Pershenkov, V. S.
Bakerenkov, A. S.
Felitsyn, V. A.
Journal Title
Journal ISSN
Volume Title
Издатель
Аннотация
We have estimated various types of errors dosimeters based on n-channel field-effect transistors with a metal-insulator-semiconductor structure (called as RADFETs). The radiation sensitivity have been experimentally investigated. There were measured the gate voltage of RADFET -based dosimeter as function of total ionizing dose (TID) at constant values of the drain current and the drain - source voltage, as well as the current -voltage characteristics before and after irradiations at different TID. We showed how radiation sensitivity and errors of sensors are depending on TID and electrical modes. Electro-physical models were proposed to interpret obtained results. © 2020 IEEE.
Описание
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Цитирование
Estimation of errors of RADFET-based dosimeters / Podlepetsky, B.I. [et al.] // 2020 20th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2020 - Proceedings. - 2020. - 10.1109/RADECS50773.2020.9857735
URI
https://www.doi.org/10.1109/RADECS50773.2020.9857735
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https://openrepository.mephi.ru/handle/123456789/23263
https://www.scopus.com/record/display.uri?eid=2-s2.0-85137982636&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000861424900030
https://openrepository.mephi.ru/handle/123456789/23263