Publication: Latent tracks of swift Bi ions in Si3N4
Дата
2020
Авторы
Van, Vuuren, A. J.
Ibrayeva, A.
Rymzhanov, R. A.
Zhalmagambetova, A.
Skuratov, V. A.
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Аннотация
© 2020 The Author(s). Published by IOP Publishing Ltd.Parameters such as track diameter and microstruture of latent tracks in polycrystalline Si3N4 induced by 710 MeV Bi ions were studied using TEM and XRD techniques, and MD simulation. Experimental results are considered in terms of the framework of a 'core-shell' inelastic thermal spike (i-TS) model. The average track radius determined by means of electron microscopy coincides with that deduced from computer modelling and is similar to the track core size predicted by the i-TS model using a boiling criterion. Indirect (XRD) techniques give a larger average latent track radius which is consistent with the integral nature of the signal collected from the probed volume of irradiated material.
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Latent tracks of swift Bi ions in Si3N4 / Van, Vuuren, A.J. [et al.] // Materials Research Express. - 2020. - 7. - № 2. - 10.1088/2053-1591/ab72d3
URI
https://www.doi.org/10.1088/2053-1591/ab72d3
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https://www.scopus.com/record/display.uri?eid=2-s2.0-85081948267&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000535216800001
https://openrepository.mephi.ru/handle/123456789/20457