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Latent tracks of swift Bi ions in Si3N4

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dc.contributor.authorVan, Vuuren, A. J.
dc.contributor.authorIbrayeva, A.
dc.contributor.authorRymzhanov, R. A.
dc.contributor.authorZhalmagambetova, A.
dc.contributor.authorSkuratov, V. A.
dc.contributor.authorСкуратов, Владимир Алексеевич
dc.date.accessioned2024-11-25T17:20:08Z
dc.date.available2024-11-25T17:20:08Z
dc.date.issued2020
dc.description.abstract© 2020 The Author(s). Published by IOP Publishing Ltd.Parameters such as track diameter and microstruture of latent tracks in polycrystalline Si3N4 induced by 710 MeV Bi ions were studied using TEM and XRD techniques, and MD simulation. Experimental results are considered in terms of the framework of a 'core-shell' inelastic thermal spike (i-TS) model. The average track radius determined by means of electron microscopy coincides with that deduced from computer modelling and is similar to the track core size predicted by the i-TS model using a boiling criterion. Indirect (XRD) techniques give a larger average latent track radius which is consistent with the integral nature of the signal collected from the probed volume of irradiated material.
dc.identifier.citationLatent tracks of swift Bi ions in Si3N4 / Van, Vuuren, A.J. [et al.] // Materials Research Express. - 2020. - 7. - № 2. - 10.1088/2053-1591/ab72d3
dc.identifier.doi10.1088/2053-1591/ab72d3
dc.identifier.urihttps://www.doi.org/10.1088/2053-1591/ab72d3
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85081948267&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000535216800001
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/20457
dc.relation.ispartofMaterials Research Express
dc.titleLatent tracks of swift Bi ions in Si3N4
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue2
oaire.citation.volume7
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relation.isAuthorOfPublication.latestForDiscoverya42d0cba-a1ca-4481-b526-7b326b53db08
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