Персона: Гришаков, Константин Сергеевич
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Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе.
Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.
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Константин Сергеевич
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- ПубликацияТолько метаданныеInterlayer Heat Conductivity and Thermal Stability of Distorted Bilayer Graphene(2021) Podlivaev, A. I.; Grishakov, K. S.; Katin, K. P.; Maslov, M. M.; Подливаев, Алексей Игоревич; Гришаков, Константин Сергеевич; Катин, Константин Петрович; Маслов, Михаил Михайлович© 2021, Pleiades Publishing, Inc.The nonorthogonal tight-binding potential is augmented by long-range terms needed for a correct description of the interlayer interaction in bilayer graphene. The molecular dynamics method is used to study the heat transfer between two distorted graphene layers, one of which is initially cooled down to 0 K, and the second one is heated up to 77−7000 K. The characteristic time of the heat transfer depending on the initial temperature of the heated layer and the distortion of the layers is determined. It is demonstrated that both factors significantly affect the intensity of interlayer heat transfer. It is found that, during the characteristic time of temperature equalization, thermally induced defects of various types, including melting, separation of the layers, and tangential shear of the heated layer, can appear in the system. It is shown that the formation of thermally induced defects can result in more than an order of magnitude increase in the rate of interlayer heat transfer.
- ПубликацияОткрытый доступПРОГРАММА ДЛЯ РАСЧЕТА СТАТИЧЕСКИХ ХАРАКТЕРИСТИК РЕЗОНАНСНО-ТУННЕЛЬНЫХ ДИОДОВ НА ОСНОВЕ GAN(НИЯУ МИФИ, 2022) Гришаков, К. С.; Каргин, Н. И.; Каргин, Николай Иванович; Гришаков, Константин СергеевичПрограмма предназначена для расчета вольт-амперных характеристик GaN резонансно-туннельных диодов (РТД) с учетом межэлектронного взаимодействия, поляризационных зарядов на гетерограницах. Область применения программы: оптимизация статических характеристик GaN РТД. Пользователем задаются: толщины слоев, значения поляризационных зарядов на гетерограницах, степень легирования, значения эффективной массы и диэлектрической проницаемости квантовой ямы, значения разрыва зоны проводимости для барьерных слоев, температура. Далее программа решает стационарную систему уравнений Шредингера и Пуассона с открытыми граничными условиями для заданной гетероструктуры. Полученная вольт-амперная характеристика записывается в выходной текстовый файл. Программа распараллелена с помощью технологии OpenMP. Тип ЭВМ: IBM PC. ОС: Windows ХР и выше, Linux.
- ПубликацияТолько метаданныеTheoretical Study of the Interaction Between Favipiravir and Fluorinated Boron Nitride Fullerene(2024) Zubkov, L. S.; Kalika, E. B.; Grishakov, K. S.; Maslov, M. M.; Katin, K. P.; Зубков, Лев Станиславович; Гришаков, Константин Сергеевич; Маслов, Михаил Михайлович; Катин, Константин Петрович
- ПубликацияТолько метаданныеParametrization of a Microwave and the Noise Model of a Metamorphic 0.15 µm MHET InAlAs/InGaAs Transistor(2021) Gorelov, A. A.; Lokotko, V. V.; Kargin, N. I.; Vasilievsky, I. S.; Grishakov, K. S.; Ryzhuk, R. V.; Горелов, Андрей Алексеевич; Каргин, Николай Иванович; Васильевский, Иван Сергеевич; Гришаков, Константин Сергеевич; Рыжук, Роман Валериевич© 2021, Pleiades Publishing, Ltd.Abstract: AlGaAs MHEMT transistors are studied in the microwave frequency range with a gate length of 0.15 μm. It is found that the discrepancy between the experimental and theoretically calculated, within the model, S-parameters does not exceed 0.5% in the frequency range from 1 to 30 GHz. The static characteristics of the device are satisfactorily described by the indicated model in the voltage range of the runoff up to 2.5 V. For the analysis of the noise characteristics, the Fukui model is used. It is found that the influence of the parasitic drain capacitance and the values of the drain and source inductances do not significantly affect the noise characteristics of the transistor, and an increase in the parasitic capacitance and a decrease in the parasitic gate inductance can lead to a significant reduction in the high-frequency noise figure.
- ПубликацияТолько метаданныеCarbon vs silicon polyprismanes: a comparative study of metallic sp(3)-hybridized allotropes(2020) Maslov, M. M.; Grishakov, K. S.; Gimaldinova, M. A.; Katin, K. P.; Маслов, Михаил Михайлович; Гришаков, Константин Сергеевич; Гимальдинова, Маргарита Александровна; Катин, Константин ПетровичPolyprismanes are the special type of single-walled nanotubes with an extremely small cross-section in the form of a regular polygon. In the presented study, we considered carbon and silicon polyprismanes that are constructed from carbon and silicon five-, six-, seven- and eight-membered rings, respectively. By means of density functional theory using the periodic boundary conditions, the geometry and electronic characteristics of these tubes were investigated. The results obtained indicate that, with an increase in the effective diameter, carbon polyprismanes undergo an abrupt change in electronic properties, which can be described as a transition from the dielectric to the metallic state. The character of the energy spectrum, as well as the behavior of transmission function near the Fermi level, illustrate that at some critical diameter they begin to exhibit non-typical for the sp(3)-carbon systems metallic nature. In such a case, it has been found from the partial density of electronic states calculation that the overlapping of bands near the Fermi level is mainly due to the 2p state of carbon atoms. Unlike carbon analogs, silicon polyprismanes are metals for any considered diameter. The metallic properties of the silicon polyprismanes arise due to the 3p states of the silicon atoms. Unexpected properties endowed by the prismane morphology discover new prospects of application of carbon and silicon nanostructures as the basic elements of future electronics.
- ПубликацияТолько метаданныеSuperconducting germanium hydride with A15 structure(2021) Degtyarenko, N. N.; Grishakov, K. S.; Дегтяренко, Николай Николаевич; Гришаков, Константин Сергеевич© 2021 Institute of Physics Publishing. All rights reserved.The possibility of the formation of A15 germanium hydride is investigated theoretically by the density functional method. It is shown that A15 germanium hydride Ge2H6 is stable in a certain pressure range of about 125 GPa. The results of calculations of the structural, phonon and electronic properties, energy characteristics of the normal phase are presented. The critical temperature of the superconducting transition is estimated.
- ПубликацияТолько метаданныеSilicon rebirth: Ab initio prediction of metallic sp3-hybridized silicon allotropes(2020) Katin, K. P.; Grishakov, K. S.; Gimaldinova, M. A.; Maslov, M. M.; Катин, Константин Петрович; Гришаков, Константин Сергеевич; Гимальдинова, Маргарита Александровна; Маслов, Михаил Михайлович© 2019 Elsevier B.V.We report the prediction of metallic quasione-dimensional sp3-hybridized silicon allotropes in the form of prismanes. Silicon prismanes or polysilaprismanes are the silicon nanotubes of a special type constructed from the dehydrogenated molecules of cyclosilanes (silicon rings). By means of density functional theory, the electronic, geometry, energy, and some mechanical properties of these tubes are investigated. Our results show that silicon polyprismanes are thermodynamically stable compounds, and the character of the energy spectrum, as well as the behavior of transmission function near the Fermi level, illustrate that they exhibit non-typical for the silicon systems metallic nature. Moreover, the metallic state of polysilaprismanes is resistant to the mechanical stresses applied along their main axis. Unusual properties predicted in the presented study discover new prospects of application of silicon nanostructures as the basic elements of future micro- and nanoelectronics, as well as in energy, metrology, medical, and information technologies.
- ПубликацияОткрытый доступКЛАСТЕРЫ АЗИДОФУЛЛЕРЕНОВ И АЗОТНО-УГЛЕРОДНЫЕ ГЕТЕРОГЕННЫЕ СТРУКТУРЫ НА ИХ ОСНОВЕ(НИЯУ МИФИ, 2025) ГРИШАКОВ, К. С.; ДЕГТЯРЕНКО, Н. Н.; Гришаков, Константин Сергеевич; Дегтяренко, Николай НиколаевичВ рамках теории функционала плотности предсказана возможность создания нового класса устойчивых кластерных веществ – азидофуллеренов, запасающих энергию, на основе существующих в природе прекурсоров – углеродных фуллеренов и присоединенных к ним азидов N3. Рассмотрена возможность получения за счет сжатия вещества, состоящего из молекул азидофуллеренов, твердой гетерогенной фазы, способной запасать энергию и устойчивой в области давлений, близких к нормальному.
- ПубликацияТолько метаданныеSolid atomic hydrogen: Point defect formation and elastic stability(2022) Grishakov, K. S.; Degtyarenko, N. N.; Гришаков, Константин Сергеевич; Дегтяренко, Николай Николаевич© 2021 Elsevier B.V.Within the framework of the density functional theory, the resistance of solid atomic hydrogen with an I41/amd crystal structure to the formation of point defects, such as a vacancy, an interstitial site, and a double vacancy, was studied. At the pressures below 265 GPa, the equilibrium vacancy concentration per atom reaches a critical value, even near the temperature of liquid helium. Thus, the destruction of the metastable atomic state occurs at higher pressures than predicted by the calculations based on the phonon spectra. For atomic hydrogen at room temperature, pressures exceeding 280 GPa are required. The elastic stability of the I41/amd atomic phase in the pressure range from 250–600 GPa was investigated. It is shown that there are regions of instability of the I41/amd atomic hydrogen phase, where a transition to the structure with FDDD symmetry occurs.
- ПубликацияТолько метаданныеStability and energy characteristics of extended nitrogen nanotubes: Density functional theory study(2019) Grishakov, K. S.; Katin, K. P.; Gimaldinova, M. A.; Maslov, M. М.; Гришаков, Константин Сергеевич; Катин, Константин Петрович; Гимальдинова, Маргарита Александровна; Маслов, Михаил Михайлович© 2019, Institute for Metals Superplasticity Problems of Russian Academy of Sciences. All rights reserved.We apply the density functional theory with B3LYP exchange-correlation energy functional and the basis set 6-31G(d) to investigate structural, energetic, and electronic properties and stability of extended armchair and zigzag nitrogen nanotubes with a length of ≈ 3 nm. The capping effect, as well as the passivation of nanotubes’ ends by hydrogen atoms and hydroxyl groups on their stability, are studied. According to our calculations, pristine nitrogen nanotubes are unstable. Both capping and passivation of the nanotube ends provide thermodynamic stability only for (3, 0) and (4, 0) zigzag nitrogen nanotubes. Moreover, the calculated frequency spectra of considered systems confirm their dynamic stability. We stress the fact that some extended nitrogen nanotubes are found to be stable under ambient conditions, i. e., in the absence of external factors such as pressure, spatial confinement, etc. The calculated HOMO-LUMO gaps for these stable extended systems are of the order of 4 eV, so they can be assigned to the class of insulators. It is shown that nitrogen nanotubes are able to store a large amount of energy and can be used as a basis for new high-energy-density materials. We expect that the all-nitrogen tubes with the longer effective length of similar chiralities are also should be stable.