Персона:
Можаев, Роман Константинович

Загружается...
Profile Picture
Email Address
Birth Date
Научные группы
Организационные подразделения
Организационная единица
Другие подразделения НИЯУ МИФИ
Структурные подразделения НИЯУ МИФИ, не включенные в состав институтов и факультетов.
Статус
Фамилия
Можаев
Имя
Роман Константинович
Имя

Результаты поиска

Теперь показываю 1 - 4 из 4
  • Публикация
    Только метаданные
    Radiation Hardness Evaluation of LEDs Based on InGaN, GaN and AlInGaP Heterostructures
    (2019) Ukolov, D. S.; Chirkov, N. A.; Mozhaev, R. K.; Pechenkin, A. A.; Можаев, Роман Константинович; Печенкин, Александр Александрович
    © 2019 IEEE.The radiation hardness results of light emitting diodes (LED) in green, blue and red regions of the spectrum and in white, based on InGaN, GaN and AlInGaP structures are presented. The technical aspects of monitoring parameters during exposure are described, and LEDs response to various radiation exposures are given.
  • Публикация
    Только метаданные
    Evaluation of Organic Light-Emitting Diodes Total Ionizing Dose Sensitivity in Temperature Range
    (2021) Mozhaev, R. K.; Pechenkin, A. A.; Ukolov, D. S.; Ulanova, A. V.; Nikiforov, A. Y.; Можаев, Роман Константинович; Печенкин, Александр Александрович; Уланова, Анастасия Владиславовна; Никифоров, Александр Юрьевич
    © 2021 IEEE.The paper presents the comparative results of spectrum degradation organic light-emitting diode with different dominant wavelengths. The diodes were exposed with stationary gamma-irradiation at room and low temperatures. The research has shown moderate degradation of the light-emission spectrum when exposed at room temperature and significant degradation at low temperature. The greatest deterioration in the optical parameters was observed for organic light-emitting diodes with blue and white light emission color.
  • Публикация
    Только метаданные
    High-speed spectrometer based on a silicon CCD-array matrix for transient changes measuring in optical radiation spectra
    (2021) Minibaev, T. I.; Ukolov, D. S.; Mozhaev, R. K.; Nikiforov, A. Y.; Можаев, Роман Константинович; Никифоров, Александр Юрьевич
    © 2021 IEEE.The paper discusses the high-speed 400-1000nm range spectrometer based on the M150 monochromator and a silicon CCD-array matrix as a detector module. A description and general diagram of the complex is presented, consisting of the following main parts: optical part, communication, and digital and software sections. The current work considers specialized software for transmitting, processing, and outputting data management of the spectrometer through a graphical user interface which allows selecting the desired wavelength range, exposure time, and duration of the graph. The complex utilizes the FPGA hardware capabilities to process converted signals in situ, providing additional services to make optical spectra analysis easier for the operator. The main application field of the spectrometer is the research of rapid changes in the spectral characteristics of optical materials, such as optic fibers and laser-pump crystals, and products based on them when exposed to pulsed ionizing radiation. Other possible subjects of research and areas of improvement are highlighted.
  • Публикация
    Только метаданные
    Application of Confocal Microscopy Methods for Research and Non-destructive Examination of Semiconductor Structures and Integrated Circuits
    (2021) Baluev, A. A.; Ukolov, D. S.; Pechenkin, A. A.; Mozhaev, R. K.; Балуев, Арсений Андреевич; Печенкин, Александр Александрович; Можаев, Роман Константинович
    © 2021 IEEE.The paper discusses the features and the possibilities of the under-development scanning confocal microscope in tasks of non-destructive examination of semiconductor electronics using the method of confocal microscopy with an emphasis on the possibility of studying the material and internal structure. The described technique allows studying integrated circuits from the substrate side of integrated circuits. This work is part of a global task and is devoted to mathematical modeling of the scanning process.