Персона: Варламов, Николай Викторович
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Институт общей профессиональной подготовки (ИОПП)
Миссией Института является:
фундаментальная базовая подготовка студентов, необходимая для получения качественного образования на уровне требований международных стандартов;
удовлетворение потребностей обучающихся в интеллектуальном, культурном, нравственном развитии и приобретении ими профессиональных знаний; формирование у студентов мотивации и умения учиться; профессиональная ориентация школьников и студентов в избранной области знаний, формирование способностей и навыков профессионального самоопределения и профессионального саморазвития.
Основными целями и задачами Института являются:
обеспечение высококачественной (фундаментальной) базовой подготовки студентов бакалавриата и специалитета; поддержка и развитие у студентов стремления к осознанному продолжению обучения в институтах (САЕ и др.) и на факультетах Университета; обеспечение преемственности образовательных программ общего среднего и высшего образования; обеспечение высокого качества довузовской подготовки учащихся Предуниверситария и школ-партнеров НИЯУ МИФИ за счет интеграции основного и дополнительного образования;
учебно-методическое руководство общеобразовательными кафедрами Института, осуществляющими подготовку бакалавров и специалистов по социо-гуманитарным, общепрофессиональным и естественнонаучным дисциплинам, обеспечение единства требований к базовой подготовке студентов в рамках крупных научно-образовательных направлений (областей знаний).
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Николай Викторович
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- ПубликацияТолько метаданныеPrecision Machining of Silicon Substrates(2019) Makarov, V. F.; Muratov, K. R.; Ablyaz, T. R.; Gashev, E. A.; Varlamov, N. V.; Варламов, Николай Викторович© 2019 Published under licence by IOP Publishing Ltd. Brittle nonmetallic structural materials, such as quartz, glass, silicon, ceramics, ferrites and glass ceramics, are widely used in mechanical engineering, instrument making and radio electronics, as well as in optical, clock and jewelry industries. These materials have high hardness, strength, wear resistance and brittleness; therefore, their machining is a complicated problem. For production of piezoelectric resonators and filters, semiconductor devices, solid-state lasers, optoelectronic devices and other parts of electronics, plates made from monocrystals of quartz, lithium tantalate and niobate, silicon, germanium, sapphire, etc. are used. Semiconductor plates, which were obtained after cutting of a boule, have a number of defects, such as presence of a mechanically affected layer, nonflateness of sides, twisting and large variation of thickness. Therefore, after cutting it is necessary to carry out grinding and polishing. Grinding (abrasive finishing) is machining of semiconductor plates by means of hard finishing grinding discs (lapping tools) using abrasive flour grains. Finishing discs (lapping tools) are usually made from cast iron, glass, steel, copper or tin. The grain size of flour grains for grinding of semiconductor plates is selected from M14 to M5. Finishing machining of silicon substrates is complicated by a number of factors, such as provision of stable sizes, and, which is more important, the required microrelief of a machined surface, and unacceptability of machining marks and micro fissure on a surface. In Perm National Research Polytechnic University, the method of abrasive finishing and polishing of surfaces of silicon substrates by means of "Rast-350" flat-finishing machine was developed. The feature of the machines is in sliding movement of a tool (lap) along a nonrecurring trajectory, which has a form of a grid of complicated configuration. At that, the speeds of movement of all points of the working face of the lapping tool are the same. The studied and proposed technological recommendations for operations of finishing and polishing of silicon substrates allowed determining the main technological regimes (time, specific pressure, and density of the grid of tool marks), as well as the required abrasive material of corresponding grain size, which allowed providing the required microrelief of substrates (Rz 25 nm, Ra 5 nm) and eliminating machining marks and micro fissures on a polished surface.
- ПубликацияТолько метаданныеSimulation of characteristics of microwave transistors with AlGaN heterostructures(2019) Pevtsov, E. Ph.; Demenkova, T. A.; Indrishenok, V. I.; Varlamov, N. V.; Варламов, Николай Викторович© 2019 Published under licence by IOP Publishing Ltd. In work results of researches in the area of simulation of electrical characteristics of the AlGaN/GaN field-effect transistor are provided. The considerable difference of transport processes in case of the strong and feeble electrical polarization is shown. The role of capture of centers in volume of a buffer layer GaN is analyzed and it is shown that deep interruptions can influence considerably on distribution of electrostatic potential and density of electrons in a buffer layer. In case of high concentration of interruptions there is a sharp lowering of density of the free electrons with increase of distance from the channel, the current density in the depth of a buffer layer decreases.
- ПубликацияТолько метаданныеThe use of quantum-kinetic models in system design synthesis of carbon nanostructures(2019) Abramov, G. V.; Gavrilov, A. N.; Kravets, O. Ja.; Varlamov, N. V.; Варламов, Николай Викторович© 2019 Published under licence by IOP Publishing Ltd. In the process of designing a carbon nanostructure (CNS) synthesis system, the main task is to determine the technological and functional parameters of synthesis. We offered a mathematical model of the process for the purpose of studying the synthesis processes using the graphite thermal evaporation, based on the Boltzmann kinetic equation, which takes into account elastic and non-elastic particle interactions. We offer a numerical solving method using the parallel computing technologies. We conducted the study of the effect of the main synthesis parameters on the carbon cluster formation and the amount of obtained material containing CNS.
- ПубликацияТолько метаданныеOptimization of the 3D-IC model structure(2019) Aralov, M. N.; Barabanov, V. F.; Kravets, O. Ja.; Nuzhny, A. M.; Varlamov, N. V.; Варламов, Николай Викторович© 2019 Published under licence by IOP Publishing Ltd. This article describes an algorithm of optimizing the placement of the main constituent elements of 3-D integrated VLSI circuits. To solve the formulated problem of optimization, it is proposed to use a modified genetic algorithm. The proposed algorithms, models and methods have been implemented in the software. The article presents the structural scheme and the results of the developed software.
- ПубликацияТолько метаданныеAlgorithmization and optimization of processes for integrated electronics engineering(2019) Kravets, O. Ja.; Choporov, O. N.; Preobrazhenskiy, A. P.; Varlamov, N. V.; Варламов, Николай Викторович© 2019 Published under licence by IOP Publishing Ltd. This paper discusses the challenges of taking a technological solution based on certain requirements, with the existence of several alternative options (alternatives) with regard to the technical requirements in the manufacture of integrated circuits, as listed in the following. The algorithm of the choice of process equipment during the production of integrated electronics is developed. The functional block diagram of an adaptive system with an adjustable model is given. The structure of the information schema implementation of the adjustment model of technological production of integrated electronics is given. The developed model of the technological process of production of integrated electronics is presented. The stages of optimization of production of integrated electronics are given. The algorithm of control of technological process of production of integrated electronics is developed.