Персона: Скуратов, Владимир Алексеевич
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Институт ядерной физики и технологий
Цель ИЯФиТ и стратегия развития - создание и развитие научно-образовательного центра мирового уровня в области ядерной физики и технологий, радиационного материаловедения, физики элементарных частиц, астрофизики и космофизики.
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Владимир Алексеевич
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- ПубликацияТолько метаданныеLight-emitting defects formed in GeO/SiO2 heterostructures with assistance of swift heavy ions(2019) Cherkova, S. G.; Volodin, V. A.; Stoffel, M.; Rinnert, H.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2018 Elsevier B.V. Germanium suboxide films and GeO/SiO2 multilayer heterostructures deposited onto Si(001) substrates using evaporation in high vacuum were modified using irradiation of 167 MeV Xe+26 ions with fluences varying from 1011 to 1013 cm−2. According to Raman spectroscopy data, the swift heavy ion irradiation does not lead to the expected decomposition of germanium suboxide in germanium nanoclusters and GeO2. Infrared absorption spectroscopy measurements show that under irradiation the GeO/SiO2 layers were intermixed with formation of Ge-O-Si bonds. We report strong photoluminescence in the visible range at room temperature, which is most probably due to Ge-related defect-induced radiative transitions. Moreover, a new infrared luminescence band (~0.8 eV) was observed in irradiated structures, which can be related to defects or defects complexes in GexSiyO2 glass.
- ПубликацияТолько метаданныеLuminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions(2019) Cherkova, S. G.; Volodin, V. A.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2019, Pleiades Publishing, Ltd.Abstract: The optical properties of float-zone (FZ) silicon irradiated with swift heavy ions (SHI) are studied. In the low-temperature photoluminescence spectra, a broad peak in the range 1.3–1.5 μm is evident along with the well-known X, W, W', R, and C lines. In this case, it is found that, as the irradiation dose is increased in the range 3 × 1011–1013 cm–2, the photoluminescence peak falls and narrows and, at the same time, its maximum shifts to longer wavelengths.
- ПубликацияТолько метаданныеSwift heavy ion stimulated formation of the Si quantum dots in Si/SiO 2 multilayer heterostructures(2019) Kamaev, G. N.; Cherkova, S. G.; Gismatulin, A. A.; Volodin, V. A.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2019 SPIE. In the present study, we experimentally examined the effect of swift Xe ion irradiation of multilayer structures involving ultrathin alternating layers of SiO 2 and amorphous hydrogenated silicon (α-Si:H), and subsequent isochronal anneals of such structures, on their properties. It is shown that the action of swift heavy ions on Si/SiO 2 multilayer structures leads to the formation of Si nanoclusters. In the latter case, the multi-layer structure of the samples was retained, and the ordering of nanoclusters along ion tracks was observed. The irradiation produces nuclei which, during subsequent anneals, facilitate the formation of Si nanocrystals (Si NCs) in the dielectric layer. In the multi-layer metal-oxide-semiconductor (MOS) structures with Si NCs embedded in the dielectric matrix, a phenomenon of bipolar resistive switching was observed. On increasing the number of NC layers, during the on-off process intermediate metastable states were manifested. This observation may prove important for realization of intermediate resistance values (multi-bit data storage) and for the development of additive neuromorphic systems.
- ПубликацияТолько метаданныеLuminescent properties of GeO x thin films and GeO/SiO 2 heterostructures modified with swift heavy ions(2019) Cherkova, S. G.; Volodin, V. A.; Stoffel, M.; Rinnert, H.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2019 SPIE. The luminescent and structural properties of GeO x thin films and GeO/SiO 2 multilayer heterostructures, irradiated with 167 MeV Xe ions with fluencies up to 10 13 cm -2 , were studied. We report strong photoluminescence in visible range at room temperature, which is most probably due to Ge-related defect-induced radiative transitions. And infrared luminescence bands (from ∼0.8 eV to ∼1.2 eV) were observed in as-deposited and irradiated structures, which can be related to defects or defects complexes in Ge x Si y O 2 glass and partially in Si substrate. It was shown that swift heavy ion irradiation does not lead to the expected phase separation of germanium suboxide into germanium nanoclusters and GeO 2 , but causes the intermixing of GeO/SiO 2 layers with the formation of Ge-O-Si bonds.