Персона: Никифоров, Александр Юрьевич
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- ПубликацияТолько метаданныеCompact Models for Radiation Hardening by Design of SiGe BiCMOS, GaAs and SOI CMOS Microwave Circuits(2021) Sotskov, D. I.; Usachev, N. A.; Elesin, V. V.; Metelkin, I. O.; Zhidkov, N. M.; Nikiforov, A. Y.; Сотсков, Денис Иванович; Усачев, Николай Александрович; Елесин, Вадим Владимирович; Жидков, Никита Михайлович; Никифоров, Александр Юрьевич© 2021 IEEE.Compact models of silicon-germanium and gallium-arsenide heterojunction bipolar transistors, gallium-arsenide pseudomorphic high electron mobility transistor, and silicon on insulator field-effect transistor radiation responses are presented. Special subcircuits for modeling displacement damages, dose rate, and total ionizing dose effects are connected to the standard device models. Models based on core VBIC, EEHEMT and BSIM provided by semiconductor foundry as a part of process design kit and verified in a frequency range from DC to 26 GHz and suitable for small signal and non-linear simulation. Radiation-dependent parameters are described by physically based equations which compatible with proprietary simulators. Examples of radiation-hardening by design techniques for microwave monolithic integrated circuits (MMIC) are presented with standard computer-aided design (CAD) tools. Proposed models were verified by estimating static and dynamic characteristics of transistors. Disagreement of experimental and simulation results are less than 20% that makes it useful and efficient tool for MMIC radiation hardening by design.
- ПубликацияТолько метаданныеCharacterization of the Effects of Neutron-Induced Displacement Damage on the SiGe:C Heterojunction Bipolar Transistors(2021) Sotskov, D. I.; Kuznetsov, A. G.; Elesin, V. V.; Selishchev, I. A.; Kotov, V. N.; Nikiforov, A. Y.; Сотсков, Денис Иванович; Кузнецов, Александр Геннадьевич; Елесин, Вадим Владимирович; Котов, Владислав Николаевич; Никифоров, Александр ЮрьевичThis paper explores the effects of neutron-induced displacement damage on static and high frequency parameters of three types of SiGe: npn heterostructure bipolar transistors from the SGB25V BiCMOS technology. © 2021 IEEE.
- ПубликацияТолько метаданныеSOI CMOS, SiGe BiCMOS, GaAs HBT and GaAs PHEMT Technologies Characterization for Radiation-Tolerant Microwave Applications(2021) Sotskov, D. I.; Kuznetsov, A. G.; Elesin, V. V.; Usachev, N. A.; Chukov, G. V.; Nikiforov, A. Y.; Сотсков, Денис Иванович; Кузнецов, Александр Геннадьевич; Елесин, Вадим Владимирович; Усачев, Николай Александрович; Чуков, Георгий Викторович; Никифоров, Александр Юрьевич© 2021 IEEE.Radiation-oriented (RO-) and microwave (MW) characterization of the several process technologies - CMOS silicon-on-insulator (SOI) 180 nm process, CMOS 90 nm process, SiGe BiCMOS 0.42/0.25 μm process, GaAs heterojunction bipolar transistor (HBT) 2 μm process and GaAs pseudomorphic high electron mobility transistor (PHEMT) 0.5 μm process, which suitable for the development of radiation-tolerance transceiver integrated circuits with operating frequencies up to 30 GHz are presented. The results of MW-characterization showed two process technologies manufacturing in "foundry"mode - CMOS SOI 180 nm and CMOS 90 nm potentiality for the development of transceiver ICs with operating frequencies above 3 GHz and 12 GHz respectively. Obtained experimental results allow to determine radiation-tolerance indicators for the total ionizing dose, neutrons, impulse exposure and heavy ions and specify critical elements and IP-block fragments for given processes. Experimental data can be used at the first step of reasonable choice of process technologies for radiation-tolerant transceiver design.
- ПубликацияТолько метаданныеA SINGLE POWER SUPPLY 0.1-3.5 GHZ LOW NOISE AMPLIFIER DESIGN USING A LOW COST 0.5 mu M D-MODE PHEMT PROCESS(2020) Sotskov, D.; Elesin, V.; Kuznetsov, A.; Usachev, N.; Zidkov, N.; Nikiforov, A.; Сотсков, Денис Иванович; Елесин, Вадим Владимирович; Кузнецов, Александр Геннадьевич; Усачев, Николай Александрович; Жидков, Никита Михайлович; Никифоров, Александр ЮрьевичDesign and testing results of a single power supply wide-band low noise amplifier (LNA) based on low cost 0.5 mu m D-mode pHEMT process are presented. It is shown that the designed cascode LNA has operating frequency range up to 3.5 GHz, power gain above 15 dB, noise figure below 2.2 dB, output linearity above 17 dBm and power consumption less than 325 mW. Potential immunity of the LNA to total ionizing dose and destructive single event effects exceed 300 krad and 60 MeV center dot cm(2)/mg respectively.