2019, Ukolov, D. S., Chirkov, N. A., Mozhaev, R. K., Pechenkin, A. A., Можаев, Роман Константинович, Печенкин, Александр Александрович

© 2019 IEEE.The radiation hardness results of light emitting diodes (LED) in green, blue and red regions of the spectrum and in white, based on InGaN, GaN and AlInGaP structures are presented. The technical aspects of monitoring parameters during exposure are described, and LEDs response to various radiation exposures are given.

2019, Chumakov, A. I., Bobrovsky, D. V., Pechenkin, A. A., Savchenkov, D. V., Sorokoumov, G. S., Shvetsov-Shilovskiy, I. I., Чумаков, Александр Иннокентьевич, Бобровский, Дмитрий Владимирович, Печенкин, Александр Александрович, Сорокоумов, Георгий Сергеевич, Швецов-Шиловский, Иван Иванович

© 2019, Pleiades Publishing, Ltd.Abstract: The results of research on nonstationary latchup effects (LEs) under the influence of heavy charged particles and ionizing radiation pulses, which are spontaneously counteracted depending on the operating conditions, are presented. This behavior is caused by the effects of the rail span collapse inside the complementary metal-oxide-system (CMOS) of very large scale integrated (VLSI) circuits. The experimental studies are carried out on both the ion accelerator and the laser facilities.

2021, Eronyan, M. A., Devetyarov, D. R., Reytskii, A. A., Meshkovskiy, I. K., Pechenkin, A. A., Печенкин, Александр Александрович

© 2021 Elsevier B.V.Oxygen deficiency in a silica glass core of fluorosilicate optical fiber manufactured by the modified chemical vapor deposition method provides extra high level of its radiation resistance. Gamma-radiation-induced attenuation (RIA) in such a fiber increases with decreasing both the test temperature (from + 25 to minus 60 °C) and the wavelength (from 1.55 to 1.31 μm). After exposure to radiation, RIA completely disappears at the room temperature. At the temperature of minus 60 °C, the optical losses restore much worse. RIA increases due to the superposition of Rayleigh scattering and absorption, with the latter decreasing with increasing wavelength.

2021, Mozhaev, R. K., Pechenkin, A. A., Ukolov, D. S., Ulanova, A. V., Nikiforov, A. Y., Можаев, Роман Константинович, Печенкин, Александр Александрович, Уланова, Анастасия Владиславовна, Никифоров, Александр Юрьевич

© 2021 IEEE.The paper presents the comparative results of spectrum degradation organic light-emitting diode with different dominant wavelengths. The diodes were exposed with stationary gamma-irradiation at room and low temperatures. The research has shown moderate degradation of the light-emission spectrum when exposed at room temperature and significant degradation at low temperature. The greatest deterioration in the optical parameters was observed for organic light-emitting diodes with blue and white light emission color.

2020, Mavritskii, O. B., Egorov, A. N., Pechenkin, A. A., Savchenkov, D. V., Boychenko, D. V., Маврицкий, Олег Борисович, Егоров, Андрей Николаевич, Печенкин, Александр Александрович, Бойченко, Дмитрий Владимирович

© COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.Singe event effect (SEE) simulation in modern integrated circuits (ICs) by femtosecond laser irradiation through the substrate allows eliminating a lot of problems connected to the presence of multiple opaque metal layers above the IC active layer. With this irradiation geometry, the proper wavelength of laser radiation should be chosen to generate sufficient amount of nonequilibrium charge in the active layer on the one hand, and to avoid significant laser energy losses in the thick substrate on the other hand. In this paper several typical microelectronic ICs were selected to investigate the dependence of SEE generation effectiveness on the laser wavelength when irradiating through the substrate of various thickness. It was found, that the most appropriate laser wavelength for the silicon substrate thicknesses of 300 to 800 μm lies in the 1030 to 1070 nm range.

2019, Mozhaev, R. K., Cherniak, M. E., Pechenkin, A. A., Ulanova, A. V., Nikiforov, A. Y., Можаев, Роман Константинович, Печенкин, Александр Александрович, Уланова, Анастасия Владиславовна, Никифоров, Александр Юрьевич

© 2019 IEEE.A method for radiation hardness evaluation of digital and microwave transmitting-receiving optoelectronic modules is presented. The technical aspects of parameters monitoring during exposure are described. The most vulnerable components of optoelectronic modules are identified.

2021, Novikov, A. A., Shvetsov-Shilovskiy, I. I., Oblova, E. N., Pechenkin, A. A., Chumakov, A. I., Швецов-Шиловский, Иван Иванович, Печенкин, Александр Александрович, Чумаков, Александр Иннокентьевич

© 2021 IEEE.In an Integrated Circuit with high SEL holding voltage, pulsed-laser radiation sensitivity was found to change due to TID irradiation. The impact of TID on the DUT SEL holding voltage and SEL sensitivity was investigated.

2020, Eron'yan, M. A., Kulesh, A. Y., Reutskii, A. A., Devet'yarov, D. R., Pechenkin, A. A., Печенкин, Александр Александрович

© 2020, Pleiades Publishing, Ltd.Abstract: It is shown that single-mode fluorosilicate optical fibers fabricated with the aid of modified chemical vapor deposition exhibit a significant decrease in the radiation resistance when 1 mol % GeO2 is introduced into the silica-glass core. Elimination of chlorine and OH group impurities in the silica glass of the core of the fluorosilicate single-mode fiber leads to a relatively low level of radiation-induced attenuation. Prior to radiation processing, the loss factors of optical fiber are 0.18 and 0.3 dB/km at wavelengths of 1.55 and 1.31 μm, respectively. The dependence of optical loss of such fibers on the bend diameter ranging from 6 to 12 mm is studied.

2021, Tsirkov, A. N., Savchenkov, D. V., Novikov, A. A., Pechenkin, A. A., Цирков, Артем Николаевич, Печенкин, Александр Александрович

© 2021 IEEE.a division of labor plays significant role in the efficiency of laser SEE Testing. The highest efficiency can be achieved when testers fulfill their roles in a global task: one is engaged in debugging and monitoring the testing progress at the facility, another one participates in the preparation and performance monitoring of the device under test (DUT). This article describes the architecture of our software for SEE testing that consists of two parts: the one responsible for the functional testing of the DUT and another one responsible for the SEE testing logic. Separating these two parts allows them to be developed independently by different specialists. The DUT part of software controls a wide variety of equipment including National Instruments PXI/PXIe modules which are commonly used for functional testing of the devices under test. The laser SEE testing part of software controls all parts of the laser facility (laser beam positioning and pulse synchronization, visualization of exposure area, etc.) and the acquisition of laser SEE testing data. One of the main points of this paper is the idea of communication between the apps on different platforms (Microsoft.NET and NI LabVIEW) over local area network.

2021, Muzafarov, M. V., Kolosova, A. S., Pechenkin, A. A., Davydov, G. G., Gromova, P. S., Boychenko, D. V., Demidova, A. V., Музафаров, Михаил Валентинович, Колосова, Анна Сергеевна, Печенкин, Александр Александрович, Давыдов, Георгий Георгиевич, Бойченко, Дмитрий Владимирович

© 2021 IEEE.A description of the system for setting a lowered environment temperature based on Peltier modules is presented. The development was carried out taking into account the peculiarities of the radiation test: minimum distance from exposure source to DUT; stand-alone use during long-term radiation test; minimum overall dimensions, transportability and flexibility when conducting tests on various exposure sources. Cooling box consists of 3-level stacked assembly of the Peltier modules, which is cooled by liquid refrigerant. Control of the assembly of Peltier modules was performed according to proportional integral and differential algorithm, provided by microcontroller with feedbacks on Pt thermoresistors. The system provides temperature stabilization of the DUT up to 23×17×12 mm in size and with released heat power up to 0.4 W at minus (60 ± 3) °C. Temperature establishing time is less than 10 minutes. Typical power consumption of developed system is about 500W.