Персона: Печенкин, Александр Александрович
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Radiation Hardness Evaluation of LEDs Based on InGaN, GaN and AlInGaP Heterostructures
2019, Ukolov, D. S., Chirkov, N. A., Mozhaev, R. K., Pechenkin, A. A., Можаев, Роман Константинович, Печенкин, Александр Александрович
© 2019 IEEE.The radiation hardness results of light emitting diodes (LED) in green, blue and red regions of the spectrum and in white, based on InGaN, GaN and AlInGaP structures are presented. The technical aspects of monitoring parameters during exposure are described, and LEDs response to various radiation exposures are given.
Optical Glasses Transmittance Reduction Under Gamma Radiation Exposure at Different Temperatures
2023, Baluev, A. A., Mozhaev, R. K., Lukashin, V. P., Pechenkin, A. A., Балуев, Арсений Андреевич, Можаев, Роман Константинович, Лукашин, Владислав Павлович, Печенкин, Александр Александрович
Comparative Assessment of Digital and UHF Optoelectronic Transceivers Radiation Hardness
2019, Mozhaev, R. K., Cherniak, M. E., Pechenkin, A. A., Ulanova, A. V., Nikiforov, A. Y., Можаев, Роман Константинович, Печенкин, Александр Александрович, Уланова, Анастасия Владиславовна, Никифоров, Александр Юрьевич
© 2019 IEEE.A method for radiation hardness evaluation of digital and microwave transmitting-receiving optoelectronic modules is presented. The technical aspects of parameters monitoring during exposure are described. The most vulnerable components of optoelectronic modules are identified.
Application of Confocal Microscopy Methods for Research and Non-destructive Examination of Semiconductor Structures and Integrated Circuits
2021, Baluev, A. A., Ukolov, D. S., Pechenkin, A. A., Mozhaev, R. K., Балуев, Арсений Андреевич, Печенкин, Александр Александрович, Можаев, Роман Константинович
© 2021 IEEE.The paper discusses the features and the possibilities of the under-development scanning confocal microscope in tasks of non-destructive examination of semiconductor electronics using the method of confocal microscopy with an emphasis on the possibility of studying the material and internal structure. The described technique allows studying integrated circuits from the substrate side of integrated circuits. This work is part of a global task and is devoted to mathematical modeling of the scanning process.
Evaluation of Organic Light-Emitting Diodes Total Ionizing Dose Sensitivity in Temperature Range
2021, Mozhaev, R. K., Pechenkin, A. A., Ukolov, D. S., Ulanova, A. V., Nikiforov, A. Y., Можаев, Роман Константинович, Печенкин, Александр Александрович, Уланова, Анастасия Владиславовна, Никифоров, Александр Юрьевич
© 2021 IEEE.The paper presents the comparative results of spectrum degradation organic light-emitting diode with different dominant wavelengths. The diodes were exposed with stationary gamma-irradiation at room and low temperatures. The research has shown moderate degradation of the light-emission spectrum when exposed at room temperature and significant degradation at low temperature. The greatest deterioration in the optical parameters was observed for organic light-emitting diodes with blue and white light emission color.