Персона: Этрекова, Майя Оразгельдыевна
Загружается...
Email Address
Birth Date
Научные группы
Организационные подразделения
Организационная единица
Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе.
Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.
Статус
Фамилия
Этрекова
Имя
Майя Оразгельдыевна
Имя
4 results
Результаты поиска
Теперь показываю 1 - 4 из 4
- ПубликацияОткрытый доступCombination of Material Processing and Characterization Methods for Miniaturization of Field-Effect Gas Sensor(2023) Samotaev, N.; Litvinov, A.; Oblov, K.; Etrekova, M.; Podlepetsky, B.; Dzhumaev, P. S.; Самотаев, Николай Николаевич; Литвинов, Артур Васильевич; Облов, Константин Юрьевич; Этрекова, Майя Оразгельдыевна; Подлепецкий, Борис Иванович; Джумаев, Павел СергеевичThe technological approach for the low-scale production of field-effect gas sensors as electronic components for use in non-lab ambient environments is described. In this work, in addition to the mechanical protection of a gas-sensitive structure, an emphasis was also placed on the very topical issue of thermal stabilization around the one temperature point, even if it is several degrees higher than the surrounding one, which will probably also be useful for any type of application for many types of field-effect sensors. Considerable attention was paid to the characterization of the results obtained by various invasive and non-invasive methods for diagnosing the manufactured construction. The technology described in this article occupies an intermediate position between laboratory samples tested in clean rooms with stable ambient atmospheres, and experimental and small-scale production sensors designed for real operating conditions to solve the narrow application of measuring low concentrations of hydrogen.
- ПубликацияОткрытый доступMOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas Sensors(2023) Litvinov, A.; Etrekova, M.; Podlepetsky, B.; Samotaev, N.; Oblov, K.; Литвинов, Артур Васильевич; Этрекова, Майя Оразгельдыевна; Подлепецкий, Борис Иванович; Самотаев, Николай Николаевич; Облов, Константин ЮрьевичThe features of the wide band gap SiC semiconductor use in the capacitive MOSFE sensors structure in terms of the hydrogen gas sensitivity effect, the response speed, and the measuring signals optimal parameters are studied. Sensors in a high-temperature ceramic housing with the Me/Ta2O5/SiCn+/4H-SiC structures and two types of gas-sensitive electrodes were made: Palladium and Platinum. The effectiveness of using Platinum as an alternative to Palladium in the MOSFE-Capacitor (MOSFEC) gas sensors high-temperature design is evaluated. It is shown that, compared with Silicon, the use of Silicon Carbide increases the response rate, while maintaining the sensors high hydrogen sensitivity. The operating temperature and test signal frequency influence for measuring the sensor s capacitance on the sensitivity to H2 have been studied.
- ПубликацияОткрытый доступStructure and Technological Parameters’ Effect on MISFET-Based Hydrogen Sensors’ Characteristics(2023) Podlepetsky, B.; Samotaev, N.; Etrekova, M.; Litvinov, A.; Подлепецкий, Борис Иванович; Самотаев, Николай Николаевич; Этрекова, Майя Оразгельдыевна; Литвинов, Артур ВасильевичThe influence of structure and technological parameters (STPs) on the metrological characteristics of hydrogen sensors based on MISFETs has been investigated. Compact electrophysical and electrical models connecting the drain current, the voltage between the drain and the source and the voltage between the gate and the substrate with the technological parameters of the n-channel MISFET as a sensitive element of the hydrogen sensor are proposed in a general form. Unlike the majority of works, in which the hydrogen sensitivity of only the threshold voltage of the MISFET is investigated, the proposed models allow us to simulate the hydrogen sensitivity of gate voltages or drain currents in weak and strong inversion modes, taking into account changes in the MIS structure charges. A quantitative assessment of the effect of STPs on MISFET performances (conversion function, hydrogen sensitivity, gas concentration measurement errors, sensitivity threshold and operating range) is given for a MISFET with a Pd-Ta2O5-SiO2-Si structure. In the calculations, the parameters of the models obtained on the basis of the previous experimental results were used. It was shown how STPs and their technological variations, taking into account the electrical parameters, can affect the characteristics of MISFET-based hydrogen sensors. It is noted, in particular, that for MISFET with submicron two-layer gate insulators, the key influencing parameters are their type and thickness. Proposed approaches and compact refined models can be used to predict performances of MISFET-based gas analysis devices and micro-systems.
- ПубликацияОткрытый доступPrototype of nitro compound vapor and trace detector based on a capacitive MIS sensor(2020) Mikhailov, A.; Samotaev, N.; Litvinov, A.; Etrekova, M.; Oblov, K.; Filipchuk, D.; Самотаев, Николай Николаевич; Литвинов, Артур Васильевич; Этрекова, Майя Оразгельдыевна; Облов, Константин Юрьевич© 2020 by the authors. Licensee MDPI, Basel, Switzerland.A prototype of a nitro compound vapor and trace detector, which uses the pyrolysis method and a capacitive gas sensor based on the metal–insulator–semiconductor (MIS) structure type Pd–SiO2 –Si, was developed and manufactured. It was experimentally established that the detection limit of trinitrotoluene trace for the detector prototype is 1 × 10−9 g, which corresponds to concentration from 10−11 g/cm3 to 10−12 g/cm3. The prototype had a response time of no more than 30 s. The possibility of further improving the characteristics of the prototype detector by reducing the overall dimensions and increasing the sensitivity of the MIS sensors is shown.