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Никитенко, Владимир Роленович

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Институт нанотехнологий в электронике, спинтронике и фотонике

Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе. Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.

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Никитенко

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Владимир Роленович

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Теперь показываю 1 - 10 из 22

Только метаданные
Joint Application of Transport Level and Effective Temperature Concepts for an Analytic Description of the Quasi- and Nonequilibrium Charge Transport in Disordered Organics
(2019) Tyutnev, A. P.; Ikhsanov, R. S.; Khan, M. D.; Nikitenko, V. R.; Никитенко, Владимир Роленович
© 2018 American Chemical Society. An analytic model based on the transport level and effective temperature concepts has been developed to describe consistently both the quasi- and nonequilibrium transport regimes in nonpolar organic solids with the Gaussian uncorrelated energetic disorder. Field and temperature dependences of drift mobility on the nonequilibrium transport regime relating to the time-of-flight experiment are in good agreement with the Monte-Carlo simulation results in a broad range of fields and temperatures using the same set of model parameters for both transport regimes.
Только метаданные
Analytic Model of Nonequilibrium Charge Transport in Disordered Organic Semiconductors with Combined Energy and Off-Diagonal Disorder
(2021) Prezhdo, O. V.; Khan, M. D.; Nikitenko, V. R.; Никитенко, Владимир Роленович
© The developed generalized analytic model of charge transport in disordered matter describes self-consistently the drift and diffusion of charge carriers, includes the nonequilibrium regime, and incorporates both energy and off-diagonal (structural) disorder. The model makes it possible to accurately describe the anomalously wide transient current "tails"observed in time-of-flight experiments over wide ranges of temperature and electric field strength. Explicitly considering the off-diagonal disorder provides a more accurate description of the energy distribution of states and other parameters of the materials. The disorder contains information about the ratio of carrier diffusion coefficient to carrier mobility and characterizes the fraction of deeper localized states that inhibit mobility.
Только метаданные
On the charge mobility in disordered organics from photo-CELIV measurements
(2020) Khan, M. D.; Nikitenko, V. R.; Никитенко, Владимир Роленович
© 2020 Elsevier B.V.The analytic theory of transient current in non-equilibrium transport regime is developed for the analysis of photo-CELIV measurements. The theory allows deriving the mobility of charge carriers from photo-CELIV measurements in disordered organic thin films, providing non-equilibrium transport conditions and the finite RC value.
Только метаданные
Theoretical analysis of the drift and diffusion of charge carriers in thin layers of organic crystals
(2019) Tyutnev, A. P.; Nikerov, D. V.; Korolev, N. A.; Nikitenko, V. R.; Королев, Николай Анатольевич; Никитенко, Владимир Роленович
© 2018 Elsevier B.V. The influence of diffusion on the current shape in the time-of-flight (TOF) experiment under conditions of the quasiequilibrium transport has been considered. An analytical expression for the transient current density has been obtained for the case of the reflecting front electrode. The expression has been found to be in a better agreement with the Monte-Carlo numerical modeling than the usual expression based on the standard convection–diffusion equation. We found an estimate of the minimum layer thickness for a flat plateau appearance on TOF current transients.
Только метаданные
Anisotropic Hole Transport in a p-Quaterphenyl Molecular Crystal: Theory and Simulation
(2021) Postnikov, V. A.; Freidzon, A. Ya.; Bagaturyants, A. A.; Burdakov, Y. V.; Nikitenko, V. R.; Фрейдзон, Александра Яковлевна; Никитенко, Владимир Роленович
© 2021 American Chemical Society.A computational procedure is proposed for predicting the charge hopping rate in organic semiconductor crystals. The procedure is verified using a p-quaterphenyl molecular crystal as the test system, in which the thermally activated hole mobility is relatively low, its hole states are localized, and, hence, charge transport is of hopping character. The hole mobility in p-quaterphenyl is simulated by the Monte Carlo method with the hopping probability governed by a Marcus-like rate constant. The microscopic parameters of the Marcus model have been calculated by ab initio multireference quantum chemical method (XMCQDPT/CASSCF). Molecular conformation and crystal environment effects on the Marcus hopping parameters are studied. It is found that different arrangements of monomers typical for the crystal structure provide different hopping parameters and, hence, different hole mobilities in different directions. Monte Carlo simulations of the hole mobility predict that the hole mobility attains its maximum in the [100] direction, where hopping occurs through parallel monomers at the closest distance, which is lower than 0.01 cm2/(V·s).
Только метаданные
Numerical analysis of the radiation-induced conductivity in polymers in a large-signal regime
(2022) Ikhsanov, R.; Tyutnev, A.; Saenko, V.; Nikitenko, V.; Никитенко, Владимир Роленович
© 2022 Author(s).We made numerical calculations of the radiation-induced conductivity by computing current densities, carrier concentrations, and internal electric fields in a disordered sample biased by constant applied voltage under a pulsed or step-function irradiation in a large-signal regime. For this purpose, we used the multiple trapping model featuring an exponential trap distribution with the dispersion parameter α. Calculations of radiation-induced conductivity were done with traditional simplifications (1D-analysis, one-carrier polymer, diffusion currents neglected, and non-injecting electrodes). The nonlinear effects accompanying the large-signal radiation-induced conductivity, such as an internal field variation, the bimolecular recombination, and the charge carrier extraction by electrodes, have been consistently accounted for. Numerical analysis agrees satisfactorily with the results of previously published analytical calculations.
Только метаданные
Modeling of charge transport in polymers with embedded crystallites
(2023) Burdakov, Y. V.; Saunina, A. Y.; Bassler, H.; Nikitenko, V. R.; Саунина, Анна Юрьевна; Никитенко, Владимир Роленович
Только метаданные
Role of the reorganization energy for charge transport in disordered organic semiconductors
(2021) Saxena, R.; Fishchuk, I. I.; Genoe, J.; Bassler, H.; Nikitenko, V. R.; Burdakov, Y. V.; Metel, Y. V.; Никитенко, Владимир Роленович
© 2021 American Physical Society.While it is commonly accepted that the activation energy of the thermally activated polaron hopping transport in disordered organic semiconductors can be decoupled into a disorder and a polaron contribution, their relative weight is still controversial. This feature is quantified in terms of the so-called C factor in the expression for the effective polaron mobility: μe∝exp[-Ea/kBT-C(σ/kBT)2], where Ea and σ are the polaron activation energy and the energy width of a Gaussian density of states (DOS), respectively. A key issue is whether the universal scaling relation (implying a constant C factor) regarding the polaron formation energy is really obeyed, as recently claimed in the literature [Seki and Wojcik, J. Chem. Phys. 145, 034106 (2016)10.1063/1.4958835]. In the present work, we reinvestigate this issue on the basis of the Marcus transition rate model using extensive kinetic Monte Carlo simulations as a benchmark tool. We compare the polaron-transport simulation data with results of analytical calculations by the effective medium approximation and multiple trapping and release approaches. The key result of this study is that the C factor for Marcus polaron hopping depends on first the degree of carrier localization, i.e., the coupling between the sites, further whether quasiequilibrium has indeed been reached, and finally the σ/Ea ratio. This implies that there is no universal scaling with respect to the relative contribution of polaron and disorder effect. Finally, we demonstrate that virtually the same values of the disorder parameter σ are determined from available experimental data using the C factors obtained here irrespective of whether the data are interpreted in terms of Marcus or Miller-Abrahams rates. This implies that molecular reorganization contributes only weakly to charge transport, and it justifies the use of the zero-order Miller-Abrahams rate model for evaluating the DOS width from temperature-dependent charge transport measurements regardless of whether or not polaron effects are accounted for.
Только метаданные
Theoretical analysis of the charge carrier transport in thin layers of disordered materials with exponential band tail states
(2023) Nikerov, D. V.; Nikitenko, V. R.; Tyutnev, A. P.; Никитенко, Владимир Роленович
Только метаданные
Analytic Modeling of the of J- V Characteristics of Quantum Dot-Based Photovoltaic Cells
(2019) Tameev, A. R.; Aleksandrov, A. E.; Saunina, A. Yu.; Nikitenko, V. R.; Chistyakov, A. A.; Zvaizgne, M. A.; Саунина, Анна Юрьевна; Никитенко, Владимир Роленович; Чистяков, Александр Александрович
An analytic model of J-V characteristics of photovoltaic devices based on quantum dot (QD) solids is developed. The model yields the upper estimation of the power conversion efficiency and predicts its extremal dependence on the diffusion length of excitons. The predictive power of our model is approved by the comparison with the experimental data for PbS QD-based solar cells.