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Саунина, Анна Юрьевна

Организационные подразделения

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Институт нанотехнологий в электронике, спинтронике и фотонике

Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе. Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.

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Саунина

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Анна Юрьевна

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Теперь показываю 1 - 8 из 8

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On Analytical Modeling of Hopping Transport of Charge Carriers and Excitations in Materials with Correlated Disorder
(2024) Saunina, A. Y.; Huang, L.; Nikitenko, V. R.; Prezhdo,O. V.; Саунина, Анна Юрьевна; Никитенко, Владимир Роленович
Spatial-energy correlations strongly influence charge and exciton transport in weakly ordered media such as organic semiconductors and nanoparticle assemblies. Focusing on cases with shorter-range interparticle interactions, we develop a unified analytic approach that allows us to calculate the temperature and field dependence of charge carrier mobility in organic quadrupole glasses and the temperature dependence of the diffusion coefficient of excitons in quantum dot solids. We obtain analytic expressions for the energy distribution of hopping centers, the characteristic escape time of charge/exciton from the energy well stemming from energy correlations around deep states, and the size of the well. The derived formulas are tested with Monte Carlo simulation results, showing good agreement and providing simple analytic expressions for analysis of charge and exciton mobility in a broad range of partially ordered media.
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Analytic Modeling of the of J- V Characteristics of Quantum Dot-Based Photovoltaic Cells
(2019) Tameev, A. R.; Aleksandrov, A. E.; Saunina, A. Yu.; Nikitenko, V. R.; Chistyakov, A. A.; Zvaizgne, M. A.; Саунина, Анна Юрьевна; Никитенко, Владимир Роленович; Чистяков, Александр Александрович
An analytic model of J-V characteristics of photovoltaic devices based on quantum dot (QD) solids is developed. The model yields the upper estimation of the power conversion efficiency and predicts its extremal dependence on the diffusion length of excitons. The predictive power of our model is approved by the comparison with the experimental data for PbS QD-based solar cells.
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Multiple-trapping formalism for the description of charge transport in disordered organic semiconductors with correlated energy disorder
(2019) Nikitenko, V. R.; Saunina, A. Yu.; Никитенко, Владимир Роленович; Саунина, Анна Юрьевна
© 2019 Published under licence by IOP Publishing Ltd. An applicability of transport level concept, as well as multiple trapping formalism for the description of charge transport in disordered organics with correlated disorder is supported by analytic modeling of temperature and field dependence of mobility. Results of this modeling are in good agreement with well-known results of Monte-Carlo simulations. The reasons for the description of transport by the multiple trapping model and the respective parameters are discussed.
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Effect of microscopic Coulomb interactions on concentration dependence mobility of charge carrriers in organic materials
(2019) Nikitenko, V. R.; Saunina, A. Yu.; Никитенко, Владимир Роленович; Саунина, Анна Юрьевна
© 2019 Published under licence by IOP Publishing Ltd. The filling of deep states is considered usually to be the reason of increase of the mobility of disordered organic materials with increasing concentration. However, at moderate concentrations the effect of microscopic Coulomb interactions (MCI) could be significant, because these interactions can reduce the activation energy of a hop. It is shown, that MCI results in significant additional increase of mobility along with concentration, in addition to the effect of the filling of deep states. The results are in qualitative agreement with existing theoretical and experimental studies.
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PbS Quantum Dots with Inorganic Ligands: Physical Modeling of the Charge and Excitation Transport in Photovoltaic Cells
(2021) Aleksandrov, A. E.; Tameev, A. R.; Saunina, A. Y.; Zvaigzne, M. A.; Chistyakov, A. A.; Nikitenko, V. R.; Martynov, I. L.; Саунина, Анна Юрьевна; Чистяков, Александр Александрович; Никитенко, Владимир Роленович; Мартынов, Игорь Леонидович
© 2021 American Chemical Society.In photovoltaic cells based on PbS colloidal quantum dot (CQD) solids, the photoconductivity and efficiency for PbS CQDs with inorganic atomic ligands of tetrabutylammonium iodide (TBAI) are reasonably larger than those for PbS CQDs with molecular ligands of the same length. The TBAI ligands can act as electron-transporting sites and contribute to the increase in mobility. The developed simple model allows the maximum efficiency of a CQD solar cell to be determined, which can be achieved by eliminating the recombination losses of charge carriers. Both experimental data and theoretical modeling testify in favor of the hopping nature of the electron transport in CQD-solids.
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Increasing the brightness and efficiency of quantum dot light-emitting diodes by optimizing the PMMA electron-blocking layer
(2022) Alexandrov, A. E.; Lypenko, D. A.; Nabievc, I.; Tkach, A. A.; Saunina, A. Y.; Nikitenko, V. R.; Samokhvalov, P. S.; Саунина, Анна Юрьевна; Никитенко, Владимир Роленович; Самохвалов, Павел Сергеевич
© 2022 SPIE. All rights reserved.Quantum dots (QDs) are promising materials for advanced light-emitting diodes (LEDs). Their high thermo- and photostabilities compared to the currently used organic materials allow achieving a greater brightness due to a higher current density. However, the imbalance of the carrier injection/transport rates is one of the weakest points of QD-based LEDs (QDLEDs), because excess charges accumulated in the emitting layer quench light emission due to various nonradiative processes. The imbalance of charge carrier transport rates in QDLEDs is related to the high potential barrier for hole injection into the QD layer, accompanied by a greater mobility of negative charges in the electron transport layer. To solve this problem, an electron-blocking layer (EBL, made, e.g., of PMMA) can be introduced, which makes it possible to control the flow of electrons into the emitting layer. Here, we have theoretically and experimentally investigated the dependence of the luminosity and current efficiency of an ITO/PEDOT:PSS/poly- TPD/PVK/QDs/PMMA/ZnO/Al multilayer QDLED on the thickness of its EBL. For this purpose, a series of devices was fabricated with the PMMA layer thickness ranging from 0.13 to 3.1 nm. By tuning this thickness, we have obtained a device with a brightness exceeding that of the control device without an EBL by a factor of four, current efficiency increased by almost an order of magnitude, and turn-on voltage lowered by about 1 V. Furthermore, we have developed a theoretical model of QDLEDs under study, which is consistent with their measured current-voltage characteristics. Using our model, we show that the brightness of the device can be significantly increased by an increase in the thickness of the polymer hole-transport layer (HTL) compared with the QD layer. Therefore, it can be concluded that fine-tuning the thicknesses of both hole- and electron transport layers of a QDLED is a promising strategy to improve charge carrier balance and thereby achieve efficient light emission.
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Математическое моделирование подвижности носителей заряда в неупорядоченных органических материалах в зависимости от концентрации носителей заряда и напряженности поля
(НИЯУ МИФИ, 2021) Саунина, А. Ю.; Саунина, Анна Юрьевна; Никитенко, В. Р.
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Modeling of charge transport in polymers with embedded crystallites
(2023) Burdakov, Y. V.; Saunina, A. Y.; Bassler, H.; Nikitenko, V. R.; Саунина, Анна Юрьевна; Никитенко, Владимир Роленович