Персона: Орлова, Ксения Николаевна
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Physical Modeling of Dislocation Connection in LEDs under Different External Impacts
© 2021, Pleiades Publishing, Ltd.Abstract: A method for physical modeling of the influence of bulk leakage-current channels (dislocations) on the electrophysical and lighting characteristics of LEDs by connecting the p–n junction of an LED in parallel to an ohmic resistance or another p–n junction is described. The relationships that allow one to determine the change in the electrophysical and lighting characteristics of LEDs under the influence of various external factors (ionizing radiation, long-term operation, etc.) have been established. Using the obtained relationships, it is possible to determine the electrophysical characteristics of dislocations according to the changes in the electrophysical and lighting characteristics of LEDs, taking the role of dislocations into account. Based on the literature data, the efficiency of using the established relationships in the analysis of the characteristics of LEDs that are exposed to external impacts has been shown.
Recovery of LED Emission Power under the Exposure to 3-n-Pulse
The article presents results of the study of the effect of LED power modes based on AlGaAs heterostructures (short-circuit, open circuit, and active mode with the passage of operating current during irradiation) on the resistance to 3-n-pulse exposure. Reduction of LED emission power under the influence of 3-n-pulse occurs in two stages irrespective of irradiation power mode, with each stage characterized by its own regularity and its own factor. Built-in electric field of p-n-junction does not contribute significantly to the degradation of LED power when exposed to 3-n-pulse. At irradiation of LED in active power mode after exposure to 3-n-pulse (Fn ≤ 1.5·1012n/cm2, Dγ≤ 20 Gy (Si)) a recovery of LED power by the value of "P is observed. Recovery of "P power leads to reduction of the damage factor at the first stage, to increase of the LED resistance, and to shift of the boundary between the stages to the area of higher neutron fluences. It is supposed, that the observed jump-like increase of "P radiation power under the influence of 3-n-pulse is caused by radiation-stimulated annealing of local mechanical stresses that is generated under the condition of passing of operating current through LED. © Published under licence by IOP Publishing Ltd.
Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures
© 2022 IOP Publishing Ltd.The size effect observed in TiAlNiAu/GaN ohmic contacts (OCs) makes itself evident in the dependence of their relative electrical characteristics R SH, R SK, ρ and geometrical parameter L T on the LTLM test line width Wk . The paper explores the geometry of relief (topography) irregularities and their interface conductivity, indicating the great significance of the fractal geometry for the description of the electrophysical and device characteristics. The regularities discovered can be of great practical importance in terms of OC development and optimization for micro-/nanoelectronics demands.