Publication: Raman diagnostics of free charge carriers in boron-doped silicon nanowires
Дата
2019
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© 2019 John Wiley & Sons, Ltd.Raman spectroscopy is used to probe free charge carriers in layers of silicon nanowires (SiNWs) formed by metal-assisted chemical etching of crystalline silicon (c-Si) wafers followed by additional doping with boron. One-phonon Raman spectra of the boron-doped SiNWs are strongly modified due to the Fano effect that allowed us to determine the free carrier concentration in the nanowires in the range from 1019 to 1020 cm−3, depending on the doping conditions. The micro-Raman mapping was used to determine the depth profile of charge carrier density along nanowires, which decreases toward the SiNWs/c-Si interface. The obtained results are discussed in view of possible applications of the Raman spectroscopy for express-diagnostics of doped Si nanostructures for photonics and thermoelectric applications.
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Raman diagnostics of free charge carriers in boron-doped silicon nanowires / Rodichkina, S.P. [et al.] // Journal of Raman Spectroscopy. - 2019. - 10.1002/jrs.5702
URI
https://www.doi.org/10.1002/jrs.5702
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https://www.scopus.com/record/display.uri?eid=2-s2.0-85071952783&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000485579700001
https://openrepository.mephi.ru/handle/123456789/18675